Home > Research > Publications & Outputs > Quantum phase transitions in Sn bilayer based i...

Research

Links

Text available via DOI:

View graph of relations

Quantum phase transitions in Sn bilayer based interfacial systems by an external strain

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Published

Standard

Quantum phase transitions in Sn bilayer based interfacial systems by an external strain. / Li, Chen; Zhuang, Qiandong; Chen, Yeqing et al.
In: Physical Chemistry Chemical Physics, Vol. 2016, No. 35, 21.09.2016, p. 24350-24355.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Li, C, Zhuang, Q, Chen, Y, Shi, C & Wang, D 2016, 'Quantum phase transitions in Sn bilayer based interfacial systems by an external strain', Physical Chemistry Chemical Physics, vol. 2016, no. 35, pp. 24350-24355. https://doi.org/10.1039/C6CP04534K

APA

Li, C., Zhuang, Q., Chen, Y., Shi, C., & Wang, D. (2016). Quantum phase transitions in Sn bilayer based interfacial systems by an external strain. Physical Chemistry Chemical Physics, 2016(35), 24350-24355. https://doi.org/10.1039/C6CP04534K

Vancouver

Li C, Zhuang Q, Chen Y, Shi C, Wang D. Quantum phase transitions in Sn bilayer based interfacial systems by an external strain. Physical Chemistry Chemical Physics. 2016 Sept 21;2016(35):24350-24355. Epub 2016 Aug 3. doi: 10.1039/C6CP04534K

Author

Li, Chen ; Zhuang, Qiandong ; Chen, Yeqing et al. / Quantum phase transitions in Sn bilayer based interfacial systems by an external strain. In: Physical Chemistry Chemical Physics. 2016 ; Vol. 2016, No. 35. pp. 24350-24355.

Bibtex

@article{ebdf5457ce4b4ca582dcc096de943643,
title = "Quantum phase transitions in Sn bilayer based interfacial systems by an external strain",
abstract = "Using first-principle calculations, we report for the first time, the changes in electronic structures of a single bilayer Sn stacked on a single bilayer Sb(Bi) and on a single quintuple layer Sb2Te3 induced by both interface polarization and strain. With BL Bi and QL Sb2Te3 substrates, the stanene tends to have a low-buckled configuration, whereas with BL Sb substrate, the stanene prefers to form high-buckled configurations. For strained Sn/Sb(Bi) system, we find that the Dirac cone state is not present in the band gap, whereas in strained Sn/Sb2Te3 system, spin-polarized Dirac cone can be introduced into the band gap. We discuss why tensile strain can result in the Dirac cone emerging at the K point based on a tight-binding lattice model. This theoretical study implies the feasibility of realizing quantum phase transitions for Sn thin films on suitable substrates. Our findings provide an effective manner in manipulating electronic structures and topological states in interfacial systems by using interface polarization and strain, which opens a new route for realizing atomically thin spintronic devices.",
author = "Chen Li and Qiandong Zhuang and Yeqing Chen and Changmin Shi and Dongchao Wang",
year = "2016",
month = sep,
day = "21",
doi = "10.1039/C6CP04534K",
language = "English",
volume = "2016",
pages = "24350--24355",
journal = "Physical Chemistry Chemical Physics",
issn = "1463-9076",
publisher = "Royal Society of Chemistry",
number = "35",

}

RIS

TY - JOUR

T1 - Quantum phase transitions in Sn bilayer based interfacial systems by an external strain

AU - Li, Chen

AU - Zhuang, Qiandong

AU - Chen, Yeqing

AU - Shi, Changmin

AU - Wang, Dongchao

PY - 2016/9/21

Y1 - 2016/9/21

N2 - Using first-principle calculations, we report for the first time, the changes in electronic structures of a single bilayer Sn stacked on a single bilayer Sb(Bi) and on a single quintuple layer Sb2Te3 induced by both interface polarization and strain. With BL Bi and QL Sb2Te3 substrates, the stanene tends to have a low-buckled configuration, whereas with BL Sb substrate, the stanene prefers to form high-buckled configurations. For strained Sn/Sb(Bi) system, we find that the Dirac cone state is not present in the band gap, whereas in strained Sn/Sb2Te3 system, spin-polarized Dirac cone can be introduced into the band gap. We discuss why tensile strain can result in the Dirac cone emerging at the K point based on a tight-binding lattice model. This theoretical study implies the feasibility of realizing quantum phase transitions for Sn thin films on suitable substrates. Our findings provide an effective manner in manipulating electronic structures and topological states in interfacial systems by using interface polarization and strain, which opens a new route for realizing atomically thin spintronic devices.

AB - Using first-principle calculations, we report for the first time, the changes in electronic structures of a single bilayer Sn stacked on a single bilayer Sb(Bi) and on a single quintuple layer Sb2Te3 induced by both interface polarization and strain. With BL Bi and QL Sb2Te3 substrates, the stanene tends to have a low-buckled configuration, whereas with BL Sb substrate, the stanene prefers to form high-buckled configurations. For strained Sn/Sb(Bi) system, we find that the Dirac cone state is not present in the band gap, whereas in strained Sn/Sb2Te3 system, spin-polarized Dirac cone can be introduced into the band gap. We discuss why tensile strain can result in the Dirac cone emerging at the K point based on a tight-binding lattice model. This theoretical study implies the feasibility of realizing quantum phase transitions for Sn thin films on suitable substrates. Our findings provide an effective manner in manipulating electronic structures and topological states in interfacial systems by using interface polarization and strain, which opens a new route for realizing atomically thin spintronic devices.

U2 - 10.1039/C6CP04534K

DO - 10.1039/C6CP04534K

M3 - Journal article

VL - 2016

SP - 24350

EP - 24355

JO - Physical Chemistry Chemical Physics

JF - Physical Chemistry Chemical Physics

SN - 1463-9076

IS - 35

ER -