Radiation hardness studies of AMS HV-CMOS 350nm prototype chip HVStripV1

Physics

Text available via DOI:

https://doi.org/10.1088/1748-0221/12/02/P02010
Final published version

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Published

Standard

Radiation hardness studies of AMS HV-CMOS 350nm prototype chip HVStripV1. / Muenstermann, Daniel Matthias Alfred.
In: Journal of Instrumentation, Vol. 12, No. 2, P02010, 15.02.2017.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Muenstermann, DMA 2017, 'Radiation hardness studies of AMS HV-CMOS 350nm prototype chip HVStripV1', Journal of Instrumentation, vol. 12, no. 2, P02010. https://doi.org/10.1088/1748-0221/12/02/P02010

APA

Muenstermann, D. M. A. (2017). Radiation hardness studies of AMS HV-CMOS 350nm prototype chip HVStripV1. Journal of Instrumentation, 12(2), Article P02010. https://doi.org/10.1088/1748-0221/12/02/P02010

Vancouver

Muenstermann DMA. Radiation hardness studies of AMS HV-CMOS 350nm prototype chip HVStripV1. Journal of Instrumentation. 2017 Feb 15;12(2):P02010. doi: 10.1088/1748-0221/12/02/P02010

Author

Muenstermann, Daniel Matthias Alfred. / Radiation hardness studies of AMS HV-CMOS 350nm prototype chip HVStripV1. In: Journal of Instrumentation. 2017 ; Vol. 12, No. 2.

Bibtex

@article{b1bd5303dde94a539c892b5641233b25,

title = "Radiation hardness studies of AMS HV-CMOS 350nm prototype chip HVStripV1",

abstract = "CMOS active pixel sensors are being investigated for their potential use in the ATLAS inner tracker upgrade at the HL-LHC. The new inner tracker will have to handle a significant increase in luminosity while maintaining a sufficient signal-to-noise ratio and pulse shaping times. This paper focuses on the prototype chip {"}HVStripV1{"} (manufactured in the AMS HV-CMOS 350nm process) characterization before and after irradiation up to fluence levels expected for the strip region in the HL-LHC environment. The results indicate an increase of depletion region after irradiation for the same bias voltage by a factor of ≈2.4 and ≈2.8 for two active pixels on the test chip. There was also a notable increase in noise levels from 85 e− to 386 e− and from 75 e− to 277 e− for the corresponding pixels.",

author = "Muenstermann, {Daniel Matthias Alfred}",

note = "{\textcopyright} CERN 2017 published under the terms of the Creative Commons Attribution 3.0 License by IOP Publishing Ltd and Sissa Medialab srl. Any further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation and DOI.",

year = "2017",

month = feb,

day = "15",

doi = "10.1088/1748-0221/12/02/P02010",

language = "English",

volume = "12",

journal = "Journal of Instrumentation",

issn = "1748-0221",

publisher = "Institute of Physics Publishing",

number = "2",

}

RIS

TY - JOUR

T1 - Radiation hardness studies of AMS HV-CMOS 350nm prototype chip HVStripV1

AU - Muenstermann, Daniel Matthias Alfred

N1 - © CERN 2017 published under the terms of the Creative Commons Attribution 3.0 License by IOP Publishing Ltd and Sissa Medialab srl. Any further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation and DOI.

PY - 2017/2/15

Y1 - 2017/2/15

N2 - CMOS active pixel sensors are being investigated for their potential use in the ATLAS inner tracker upgrade at the HL-LHC. The new inner tracker will have to handle a significant increase in luminosity while maintaining a sufficient signal-to-noise ratio and pulse shaping times. This paper focuses on the prototype chip "HVStripV1" (manufactured in the AMS HV-CMOS 350nm process) characterization before and after irradiation up to fluence levels expected for the strip region in the HL-LHC environment. The results indicate an increase of depletion region after irradiation for the same bias voltage by a factor of ≈2.4 and ≈2.8 for two active pixels on the test chip. There was also a notable increase in noise levels from 85 e− to 386 e− and from 75 e− to 277 e− for the corresponding pixels.

AB - CMOS active pixel sensors are being investigated for their potential use in the ATLAS inner tracker upgrade at the HL-LHC. The new inner tracker will have to handle a significant increase in luminosity while maintaining a sufficient signal-to-noise ratio and pulse shaping times. This paper focuses on the prototype chip "HVStripV1" (manufactured in the AMS HV-CMOS 350nm process) characterization before and after irradiation up to fluence levels expected for the strip region in the HL-LHC environment. The results indicate an increase of depletion region after irradiation for the same bias voltage by a factor of ≈2.4 and ≈2.8 for two active pixels on the test chip. There was also a notable increase in noise levels from 85 e− to 386 e− and from 75 e− to 277 e− for the corresponding pixels.

U2 - 10.1088/1748-0221/12/02/P02010

DO - 10.1088/1748-0221/12/02/P02010

M3 - Journal article

VL - 12

JO - Journal of Instrumentation

JF - Journal of Instrumentation

SN - 1748-0221

IS - 2

M1 - P02010

ER -

Research

Links

Text available via DOI: