Home > Research > Publications & Outputs > Radiation hardness studies of neutron irradiate...

Research

Electronic data

  • jinst16_02_p02016

    Rights statement: © CERN 2016, published under the terms of the Creative Commons Attribution 3.0 License by IOP Publishing Ltd and Sissa Medialab srl. Any further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation and DOI.

    Final published version, 1.01 MB, PDF document

    Available under license: CC BY

Links

Text available via DOI:

View graph of relations

Radiation hardness studies of neutron irradiated CMOS sensors fabricated in the ams H18 high voltage process

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Published

Standard

Radiation hardness studies of neutron irradiated CMOS sensors fabricated in the ams H18 high voltage process. / Fernandez-Garcia, M.; Gallrapp, C.; Moll, M. et al.
In: Journal of Instrumentation, Vol. 11, P02016, 26.02.2016.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Fernandez-Garcia, M, Gallrapp, C, Moll, M & Muenstermann, DMA 2016, 'Radiation hardness studies of neutron irradiated CMOS sensors fabricated in the ams H18 high voltage process', Journal of Instrumentation, vol. 11, P02016. https://doi.org/10.1088/1748-0221/11/02/P02016

APA

Fernandez-Garcia, M., Gallrapp, C., Moll, M., & Muenstermann, D. M. A. (2016). Radiation hardness studies of neutron irradiated CMOS sensors fabricated in the ams H18 high voltage process. Journal of Instrumentation, 11, Article P02016. https://doi.org/10.1088/1748-0221/11/02/P02016

Vancouver

Fernandez-Garcia M, Gallrapp C, Moll M, Muenstermann DMA. Radiation hardness studies of neutron irradiated CMOS sensors fabricated in the ams H18 high voltage process. Journal of Instrumentation. 2016 Feb 26;11:P02016. doi: 10.1088/1748-0221/11/02/P02016

Author

Fernandez-Garcia, M. ; Gallrapp, C. ; Moll, M. et al. / Radiation hardness studies of neutron irradiated CMOS sensors fabricated in the ams H18 high voltage process. In: Journal of Instrumentation. 2016 ; Vol. 11.

Bibtex

@article{ec090a3233b24e87a9550cb2966d1bcc,
title = "Radiation hardness studies of neutron irradiated CMOS sensors fabricated in the ams H18 high voltage process",
abstract = "High voltage CMOS detectors (HVCMOSv3), fabricated in the ams H18 high voltage process, with a substrate resistivity of 10 Ω·cm were irradiated with neutrons up to a fluence of 2×1016 neq/cm2and characterized using edge-TCT. It was found that, within the measured fluence range, the active region and the collected charge reach a maximum at about 7×1015 neq/cm2 to decrease to the level of the unirradiated detector after 2×1016 neq/cm2.",
author = "M. Fernandez-Garcia and C. Gallrapp and M. Moll and Muenstermann, {Daniel Matthias Alfred}",
note = "{\textcopyright} CERN 2016, published under the terms of the Creative Commons Attribution 3.0 License by IOP Publishing Ltd and Sissa Medialab srl. Any further distribution of this work must maintain attribution to the author(s) and the published article{\textquoteright}s title, journal citation and DOI.",
year = "2016",
month = feb,
day = "26",
doi = "10.1088/1748-0221/11/02/P02016",
language = "English",
volume = "11",
journal = "Journal of Instrumentation",
issn = "1748-0221",
publisher = "Institute of Physics Publishing",

}

RIS

TY - JOUR

T1 - Radiation hardness studies of neutron irradiated CMOS sensors fabricated in the ams H18 high voltage process

AU - Fernandez-Garcia, M.

AU - Gallrapp, C.

AU - Moll, M.

AU - Muenstermann, Daniel Matthias Alfred

N1 - © CERN 2016, published under the terms of the Creative Commons Attribution 3.0 License by IOP Publishing Ltd and Sissa Medialab srl. Any further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation and DOI.

PY - 2016/2/26

Y1 - 2016/2/26

N2 - High voltage CMOS detectors (HVCMOSv3), fabricated in the ams H18 high voltage process, with a substrate resistivity of 10 Ω·cm were irradiated with neutrons up to a fluence of 2×1016 neq/cm2and characterized using edge-TCT. It was found that, within the measured fluence range, the active region and the collected charge reach a maximum at about 7×1015 neq/cm2 to decrease to the level of the unirradiated detector after 2×1016 neq/cm2.

AB - High voltage CMOS detectors (HVCMOSv3), fabricated in the ams H18 high voltage process, with a substrate resistivity of 10 Ω·cm were irradiated with neutrons up to a fluence of 2×1016 neq/cm2and characterized using edge-TCT. It was found that, within the measured fluence range, the active region and the collected charge reach a maximum at about 7×1015 neq/cm2 to decrease to the level of the unirradiated detector after 2×1016 neq/cm2.

U2 - 10.1088/1748-0221/11/02/P02016

DO - 10.1088/1748-0221/11/02/P02016

M3 - Journal article

VL - 11

JO - Journal of Instrumentation

JF - Journal of Instrumentation

SN - 1748-0221

M1 - P02016

ER -