Home > Research > Publications & Outputs > Radiation-induced statistical uncertainty in th...

Associated organisational unit

View graph of relations

Radiation-induced statistical uncertainty in the threshold voltage measurement of MOSFET dosimeters.

Research output: Contribution to Journal/MagazineJournal article

<mark>Journal publication date</mark>28/06/2004
<mark>Journal</mark>Physics in Medicine and Biology
Issue number14
Number of pages15
Pages (from-to)3145-3159
Publication StatusPublished
<mark>Original language</mark>English


The results of a recent study on the limiting uncertainties in the measurement of photon radiation dose with MOSFET dosimeters are reported. The statistical uncertainty in dose measurement from a single device has been measured before and after irradiation. The resulting increase in 1/f noise with radiation dose has been investigated via various analytical models. The limit of uncertainty in the ubiquitous linear trend of threshold voltage with dose has been measured and compared to two nonlinear models. Inter-device uncertainty has been investigated in a group of 40 devices, and preliminary evidence for kurtosis and skewness in the distributions for devices without external bias has been observed.