Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Rapid slider LPE growth of InAs quantum wells
AU - Krier, A
AU - Labadi, Z
AU - Richardson, J
PY - 1998/10
Y1 - 1998/10
N2 - The authors report the successful growth of InAs quantum wells from the liquid phase using liquid phase epitaxy (LPE). They demonstrate the capacity of a modified rapid slider LPE technique for the growth of InAs layers in the thickness range below the electron de Broglie wavelength. InAs quantum wells 2.5nm in thickness have been grown with excellent interface quality and thickness uniformity comparable to molecular beam or vapour phase techniques such as MBE or MOVPE. InAs quantum wells were grown closely lattice-matched to InAsSbP quaternary alloy confining layers having a much wider energy bandgap (0.5eV). These quantum wells embedded between proper lattice-matched confining layers with a wider bandgap form the key element of a promising structure for the fabrication of mid-infrared LEDs and lasers based on InAs quantum wells. Some basic characteristics of the kinetics of InAs heteroepitaxy on InAsSbP quaternary surfaces are reported and the extent to which the main experimental parameters control the resulting layer thickness is determined.
AB - The authors report the successful growth of InAs quantum wells from the liquid phase using liquid phase epitaxy (LPE). They demonstrate the capacity of a modified rapid slider LPE technique for the growth of InAs layers in the thickness range below the electron de Broglie wavelength. InAs quantum wells 2.5nm in thickness have been grown with excellent interface quality and thickness uniformity comparable to molecular beam or vapour phase techniques such as MBE or MOVPE. InAs quantum wells were grown closely lattice-matched to InAsSbP quaternary alloy confining layers having a much wider energy bandgap (0.5eV). These quantum wells embedded between proper lattice-matched confining layers with a wider bandgap form the key element of a promising structure for the fabrication of mid-infrared LEDs and lasers based on InAs quantum wells. Some basic characteristics of the kinetics of InAs heteroepitaxy on InAsSbP quaternary surfaces are reported and the extent to which the main experimental parameters control the resulting layer thickness is determined.
U2 - 10.1049/ip-opt:19982309
DO - 10.1049/ip-opt:19982309
M3 - Journal article
VL - 145
SP - 297
EP - 301
JO - IEE Proceedings - Optoelectronics
JF - IEE Proceedings - Optoelectronics
SN - 1350-2433
IS - 5
ER -