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Recent advancements in the development of radiation hard semiconductor detectors for S-LHC.

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Recent advancements in the development of radiation hard semiconductor detectors for S-LHC. / Ftretwurst, E.; Brodbeck, T. J.; Campbell, Duncan et al.
In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 552, No. 1-2, 21.10.2005, p. 7-19.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Ftretwurst, E, Brodbeck, TJ, Campbell, D, Chilingarov, A, Hughes, G, Jones, BK, Sloan, T & et al., CERN-RDC 2005, 'Recent advancements in the development of radiation hard semiconductor detectors for S-LHC.', Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 552, no. 1-2, pp. 7-19. https://doi.org/10.1016/j.nima.2005.05.039

APA

Ftretwurst, E., Brodbeck, T. J., Campbell, D., Chilingarov, A., Hughes, G., Jones, B. K., Sloan, T., & et al., CERN.-RD. C. (2005). Recent advancements in the development of radiation hard semiconductor detectors for S-LHC. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 552(1-2), 7-19. https://doi.org/10.1016/j.nima.2005.05.039

Vancouver

Ftretwurst E, Brodbeck TJ, Campbell D, Chilingarov A, Hughes G, Jones BK et al. Recent advancements in the development of radiation hard semiconductor detectors for S-LHC. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2005 Oct 21;552(1-2):7-19. doi: 10.1016/j.nima.2005.05.039

Author

Ftretwurst, E. ; Brodbeck, T. J. ; Campbell, Duncan et al. / Recent advancements in the development of radiation hard semiconductor detectors for S-LHC. In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2005 ; Vol. 552, No. 1-2. pp. 7-19.

Bibtex

@article{28a76d73d1c849668ee2ba96c481f973,
title = "Recent advancements in the development of radiation hard semiconductor detectors for S-LHC.",
abstract = "The proposed luminosity upgrade of the Large Hadron Collider (S-LHC) at CERN will demand the innermost layers of the vertex detectors to sustain fluences of about 1016 hadrons/cm2. Due to the high multiplicity of tracks, the required spatial resolution and the extremely harsh radiation field new detector concepts and semiconductor materials have to be explored for a possible solution of this challenge. The CERN RD50 collaboration “Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders” has started in 2002 an R&D program for the development of detector technologies that will fulfill the requirements of the S-LHC. Different strategies are followed by RD50 to improve the radiation tolerance. These include the development of defect engineered silicon like Czochralski, epitaxial and oxygen-enriched silicon and of other semiconductor materials like SiC and GaN as well as extensive studies of the microscopic defects responsible for the degradation of irradiated sensors. Further, with 3D, Semi-3D and thin devices new detector concepts have been evaluated. These and other recent advancements of the RD50 collaboration are presented and discussed.",
keywords = "Radiation damage, Semiconductor detectors, Defect engineering, Super-LHC",
author = "E. Ftretwurst and Brodbeck, {T. J.} and Duncan Campbell and Alexandre Chilingarov and Gareth Hughes and Jones, {B. K.} and Terry Sloan and {et al.}, {CERN-RD50 Collaboration}",
year = "2005",
month = oct,
day = "21",
doi = "10.1016/j.nima.2005.05.039",
language = "English",
volume = "552",
pages = "7--19",
journal = "Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",
issn = "0168-9002",
publisher = "ELSEVIER SCIENCE BV",
number = "1-2",

}

RIS

TY - JOUR

T1 - Recent advancements in the development of radiation hard semiconductor detectors for S-LHC.

AU - Ftretwurst, E.

AU - Brodbeck, T. J.

AU - Campbell, Duncan

AU - Chilingarov, Alexandre

AU - Hughes, Gareth

AU - Jones, B. K.

AU - Sloan, Terry

AU - et al., CERN-RD50 Collaboration

PY - 2005/10/21

Y1 - 2005/10/21

N2 - The proposed luminosity upgrade of the Large Hadron Collider (S-LHC) at CERN will demand the innermost layers of the vertex detectors to sustain fluences of about 1016 hadrons/cm2. Due to the high multiplicity of tracks, the required spatial resolution and the extremely harsh radiation field new detector concepts and semiconductor materials have to be explored for a possible solution of this challenge. The CERN RD50 collaboration “Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders” has started in 2002 an R&D program for the development of detector technologies that will fulfill the requirements of the S-LHC. Different strategies are followed by RD50 to improve the radiation tolerance. These include the development of defect engineered silicon like Czochralski, epitaxial and oxygen-enriched silicon and of other semiconductor materials like SiC and GaN as well as extensive studies of the microscopic defects responsible for the degradation of irradiated sensors. Further, with 3D, Semi-3D and thin devices new detector concepts have been evaluated. These and other recent advancements of the RD50 collaboration are presented and discussed.

AB - The proposed luminosity upgrade of the Large Hadron Collider (S-LHC) at CERN will demand the innermost layers of the vertex detectors to sustain fluences of about 1016 hadrons/cm2. Due to the high multiplicity of tracks, the required spatial resolution and the extremely harsh radiation field new detector concepts and semiconductor materials have to be explored for a possible solution of this challenge. The CERN RD50 collaboration “Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders” has started in 2002 an R&D program for the development of detector technologies that will fulfill the requirements of the S-LHC. Different strategies are followed by RD50 to improve the radiation tolerance. These include the development of defect engineered silicon like Czochralski, epitaxial and oxygen-enriched silicon and of other semiconductor materials like SiC and GaN as well as extensive studies of the microscopic defects responsible for the degradation of irradiated sensors. Further, with 3D, Semi-3D and thin devices new detector concepts have been evaluated. These and other recent advancements of the RD50 collaboration are presented and discussed.

KW - Radiation damage

KW - Semiconductor detectors

KW - Defect engineering

KW - Super-LHC

U2 - 10.1016/j.nima.2005.05.039

DO - 10.1016/j.nima.2005.05.039

M3 - Journal article

VL - 552

SP - 7

EP - 19

JO - Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

SN - 0168-9002

IS - 1-2

ER -