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Reduced free carrier absorption loss in midinfrared double heterostructure diode lasers grown by liquid phase epitaxy. .

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Reduced free carrier absorption loss in midinfrared double heterostructure diode lasers grown by liquid phase epitaxy. . / Yin, M.; Krier, A.; Jones, Robert; Carrington, Peter.

In: Applied Physics Letters, Vol. 91, No. 10, 101104, 03.09.2007.

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@article{149de7227e3147f4a98b1fdd7efaf7dc,
title = "Reduced free carrier absorption loss in midinfrared double heterostructure diode lasers grown by liquid phase epitaxy. .",
abstract = "An improved InAsSb/InAsSbP double heterojunction ridge laser was designed and grown by liquid phase epitaxy. The cladding layer absorption loss was minimized by the introduction of two undoped quaternary layers on either side of the active region to form a five layer epitaxial structure. The inserted layers also helped alleviate interdiffusion of unwanted dopants into the active region and reduced current leakage in the device. The resulting diode lasers operate readily in pulsed mode near 3.5 µm at elevated temperatures and with a threshold current density as low as 118 A cm−2 at 85 K. Compared to the conventional three-layer double heterostructure laser, the modified structure with reduced optical loss increased the maximum lasing temperature by 95–210 K.",
author = "M. Yin and A. Krier and Robert Jones and Peter Carrington",
note = "Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 91 (10), 2007 and may be found at http://link.aip.org/link/?APPLAB/91/101104/1",
year = "2007",
month = sep,
day = "3",
doi = "10.1063/1.2779246",
language = "English",
volume = "91",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "10",

}

RIS

TY - JOUR

T1 - Reduced free carrier absorption loss in midinfrared double heterostructure diode lasers grown by liquid phase epitaxy. .

AU - Yin, M.

AU - Krier, A.

AU - Jones, Robert

AU - Carrington, Peter

N1 - Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 91 (10), 2007 and may be found at http://link.aip.org/link/?APPLAB/91/101104/1

PY - 2007/9/3

Y1 - 2007/9/3

N2 - An improved InAsSb/InAsSbP double heterojunction ridge laser was designed and grown by liquid phase epitaxy. The cladding layer absorption loss was minimized by the introduction of two undoped quaternary layers on either side of the active region to form a five layer epitaxial structure. The inserted layers also helped alleviate interdiffusion of unwanted dopants into the active region and reduced current leakage in the device. The resulting diode lasers operate readily in pulsed mode near 3.5 µm at elevated temperatures and with a threshold current density as low as 118 A cm−2 at 85 K. Compared to the conventional three-layer double heterostructure laser, the modified structure with reduced optical loss increased the maximum lasing temperature by 95–210 K.

AB - An improved InAsSb/InAsSbP double heterojunction ridge laser was designed and grown by liquid phase epitaxy. The cladding layer absorption loss was minimized by the introduction of two undoped quaternary layers on either side of the active region to form a five layer epitaxial structure. The inserted layers also helped alleviate interdiffusion of unwanted dopants into the active region and reduced current leakage in the device. The resulting diode lasers operate readily in pulsed mode near 3.5 µm at elevated temperatures and with a threshold current density as low as 118 A cm−2 at 85 K. Compared to the conventional three-layer double heterostructure laser, the modified structure with reduced optical loss increased the maximum lasing temperature by 95–210 K.

U2 - 10.1063/1.2779246

DO - 10.1063/1.2779246

M3 - Journal article

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

M1 - 101104

ER -