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Relationship between strain and the surface electronic structure of Cu(111) films on Ru(0001): Theory and experiment

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Relationship between strain and the surface electronic structure of Cu(111) films on Ru(0001): Theory and experiment. / Calleja, F.; Garcia-Suarez, Victor M.; Hinarejos, J. J. et al.
In: Physical review B, Vol. 71, No. 12, 15.03.2005, p. 125412.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Calleja, F, Garcia-Suarez, VM, Hinarejos, JJ, Ferrer, J, De Parga, ALV & Miranda, R 2005, 'Relationship between strain and the surface electronic structure of Cu(111) films on Ru(0001): Theory and experiment', Physical review B, vol. 71, no. 12, pp. 125412. https://doi.org/10.1103/PhysRevB.71.125412

APA

Calleja, F., Garcia-Suarez, V. M., Hinarejos, J. J., Ferrer, J., De Parga, A. L. V., & Miranda, R. (2005). Relationship between strain and the surface electronic structure of Cu(111) films on Ru(0001): Theory and experiment. Physical review B, 71(12), 125412. https://doi.org/10.1103/PhysRevB.71.125412

Vancouver

Calleja F, Garcia-Suarez VM, Hinarejos JJ, Ferrer J, De Parga ALV, Miranda R. Relationship between strain and the surface electronic structure of Cu(111) films on Ru(0001): Theory and experiment. Physical review B. 2005 Mar 15;71(12):125412. doi: 10.1103/PhysRevB.71.125412

Author

Calleja, F. ; Garcia-Suarez, Victor M. ; Hinarejos, J. J. et al. / Relationship between strain and the surface electronic structure of Cu(111) films on Ru(0001): Theory and experiment. In: Physical review B. 2005 ; Vol. 71, No. 12. pp. 125412.

Bibtex

@article{72f7c7afef45429bb47a775c89aa1128,
title = "Relationship between strain and the surface electronic structure of Cu(111) films on Ru(0001): Theory and experiment",
abstract = "The relationship between strain and surface electronic structure of Cu(111) films grown on Ru(0001) is studied by a combination of tunneling spectroscopy and ab initio theoretical calculations. Experimentally, the relaxation of the 5.5% in-plane lattice mismatch between Ru(0001) and Cu(111) changes layer-by-layer the lateral lattice parameter of the Cu film, while the surface state, that is above the Fermi level for the pseudomorphic monolayer of Cu, shifts down in energy with increasing thickness until it becomes the occupied surface state of Cu(111). The effects due to strain in the Cu films are distinguished from those due to the proximity to the Ru substrate by detailed comparisons with theoretically expanded Cu(111) and Cu/Ru(0001) surfaces. Our ab initio calculations indicate that the observed energy shift must be essentially assigned to the decreasing tensile stress of the deposited film.",
keywords = "copper, metallic thin films, tunnelling, ab initio calculations, lattice constants, surface states, Fermi level",
author = "F. Calleja and Garcia-Suarez, {Victor M.} and Hinarejos, {J. J.} and J. Ferrer and {De Parga}, {A. L. V.} and R. Miranda",
year = "2005",
month = mar,
day = "15",
doi = "10.1103/PhysRevB.71.125412",
language = "English",
volume = "71",
pages = "125412",
journal = "Physical review B",
issn = "1550-235X",
publisher = "AMER PHYSICAL SOC",
number = "12",

}

RIS

TY - JOUR

T1 - Relationship between strain and the surface electronic structure of Cu(111) films on Ru(0001): Theory and experiment

AU - Calleja, F.

AU - Garcia-Suarez, Victor M.

AU - Hinarejos, J. J.

AU - Ferrer, J.

AU - De Parga, A. L. V.

AU - Miranda, R.

PY - 2005/3/15

Y1 - 2005/3/15

N2 - The relationship between strain and surface electronic structure of Cu(111) films grown on Ru(0001) is studied by a combination of tunneling spectroscopy and ab initio theoretical calculations. Experimentally, the relaxation of the 5.5% in-plane lattice mismatch between Ru(0001) and Cu(111) changes layer-by-layer the lateral lattice parameter of the Cu film, while the surface state, that is above the Fermi level for the pseudomorphic monolayer of Cu, shifts down in energy with increasing thickness until it becomes the occupied surface state of Cu(111). The effects due to strain in the Cu films are distinguished from those due to the proximity to the Ru substrate by detailed comparisons with theoretically expanded Cu(111) and Cu/Ru(0001) surfaces. Our ab initio calculations indicate that the observed energy shift must be essentially assigned to the decreasing tensile stress of the deposited film.

AB - The relationship between strain and surface electronic structure of Cu(111) films grown on Ru(0001) is studied by a combination of tunneling spectroscopy and ab initio theoretical calculations. Experimentally, the relaxation of the 5.5% in-plane lattice mismatch between Ru(0001) and Cu(111) changes layer-by-layer the lateral lattice parameter of the Cu film, while the surface state, that is above the Fermi level for the pseudomorphic monolayer of Cu, shifts down in energy with increasing thickness until it becomes the occupied surface state of Cu(111). The effects due to strain in the Cu films are distinguished from those due to the proximity to the Ru substrate by detailed comparisons with theoretically expanded Cu(111) and Cu/Ru(0001) surfaces. Our ab initio calculations indicate that the observed energy shift must be essentially assigned to the decreasing tensile stress of the deposited film.

KW - copper

KW - metallic thin films

KW - tunnelling

KW - ab initio calculations

KW - lattice constants

KW - surface states

KW - Fermi level

U2 - 10.1103/PhysRevB.71.125412

DO - 10.1103/PhysRevB.71.125412

M3 - Journal article

VL - 71

SP - 125412

JO - Physical review B

JF - Physical review B

SN - 1550-235X

IS - 12

ER -