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Resonant tunnelling and negative differential conductance in graphene transistors

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Published

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Resonant tunnelling and negative differential conductance in graphene transistors. / Britnell, L.; Gorbachev, R. V.; Geim, A. K. et al.
In: Nature Communications, Vol. 4, No. 4, 1794, 04.2013.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Britnell, L, Gorbachev, RV, Geim, AK, Ponomarenko, LA, Mishchenko, A, Greenaway, MT, Fromhold, TM, Novoselov, KS & Eaves, L 2013, 'Resonant tunnelling and negative differential conductance in graphene transistors', Nature Communications, vol. 4, no. 4, 1794. https://doi.org/10.1038/ncomms2817

APA

Britnell, L., Gorbachev, R. V., Geim, A. K., Ponomarenko, L. A., Mishchenko, A., Greenaway, M. T., Fromhold, T. M., Novoselov, K. S., & Eaves, L. (2013). Resonant tunnelling and negative differential conductance in graphene transistors. Nature Communications, 4(4), Article 1794. https://doi.org/10.1038/ncomms2817

Vancouver

Britnell L, Gorbachev RV, Geim AK, Ponomarenko LA, Mishchenko A, Greenaway MT et al. Resonant tunnelling and negative differential conductance in graphene transistors. Nature Communications. 2013 Apr;4(4):1794. doi: 10.1038/ncomms2817

Author

Britnell, L. ; Gorbachev, R. V. ; Geim, A. K. et al. / Resonant tunnelling and negative differential conductance in graphene transistors. In: Nature Communications. 2013 ; Vol. 4, No. 4.

Bibtex

@article{cc058929a720411e99c4b272af4160d4,
title = "Resonant tunnelling and negative differential conductance in graphene transistors",
abstract = "The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we report resonant tunnelling of Dirac fermions through a boron nitride barrier, a few atomic layers thick, sandwiched between two graphene electrodes. The resonance occurs when the electronic spectra of the two electrodes are aligned. The resulting negative differential conductance in the device characteristics persists up to room temperature and is gate voltage-tuneable due to graphene's unique Dirac-like spectrum. Although conventional resonant tunnelling devices comprising a quantum well sandwiched between two tunnel barriers are tens of nanometres thick, the tunnelling carriers in our devices cross only a few atomic layers, offering the prospect of ultra-fast transit times. This feature, combined with the multi-valued form of the device characteristics, has potential for applications in high-frequency and logic devices.",
keywords = "HEXAGONAL BORON-NITRIDE, HETEROSTRUCTURES, ELECTRONICS, MICROSCOPY, BARRIERS, DEVICES, LAYERS",
author = "L. Britnell and Gorbachev, {R. V.} and Geim, {A. K.} and Ponomarenko, {L. A.} and A. Mishchenko and Greenaway, {M. T.} and Fromhold, {T. M.} and Novoselov, {K. S.} and L. Eaves",
year = "2013",
month = apr,
doi = "10.1038/ncomms2817",
language = "English",
volume = "4",
journal = "Nature Communications",
issn = "2041-1723",
publisher = "Nature Publishing Group",
number = "4",

}

RIS

TY - JOUR

T1 - Resonant tunnelling and negative differential conductance in graphene transistors

AU - Britnell, L.

AU - Gorbachev, R. V.

AU - Geim, A. K.

AU - Ponomarenko, L. A.

AU - Mishchenko, A.

AU - Greenaway, M. T.

AU - Fromhold, T. M.

AU - Novoselov, K. S.

AU - Eaves, L.

PY - 2013/4

Y1 - 2013/4

N2 - The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we report resonant tunnelling of Dirac fermions through a boron nitride barrier, a few atomic layers thick, sandwiched between two graphene electrodes. The resonance occurs when the electronic spectra of the two electrodes are aligned. The resulting negative differential conductance in the device characteristics persists up to room temperature and is gate voltage-tuneable due to graphene's unique Dirac-like spectrum. Although conventional resonant tunnelling devices comprising a quantum well sandwiched between two tunnel barriers are tens of nanometres thick, the tunnelling carriers in our devices cross only a few atomic layers, offering the prospect of ultra-fast transit times. This feature, combined with the multi-valued form of the device characteristics, has potential for applications in high-frequency and logic devices.

AB - The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we report resonant tunnelling of Dirac fermions through a boron nitride barrier, a few atomic layers thick, sandwiched between two graphene electrodes. The resonance occurs when the electronic spectra of the two electrodes are aligned. The resulting negative differential conductance in the device characteristics persists up to room temperature and is gate voltage-tuneable due to graphene's unique Dirac-like spectrum. Although conventional resonant tunnelling devices comprising a quantum well sandwiched between two tunnel barriers are tens of nanometres thick, the tunnelling carriers in our devices cross only a few atomic layers, offering the prospect of ultra-fast transit times. This feature, combined with the multi-valued form of the device characteristics, has potential for applications in high-frequency and logic devices.

KW - HEXAGONAL BORON-NITRIDE

KW - HETEROSTRUCTURES

KW - ELECTRONICS

KW - MICROSCOPY

KW - BARRIERS

KW - DEVICES

KW - LAYERS

U2 - 10.1038/ncomms2817

DO - 10.1038/ncomms2817

M3 - Journal article

VL - 4

JO - Nature Communications

JF - Nature Communications

SN - 2041-1723

IS - 4

M1 - 1794

ER -