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Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

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Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype. / Benoit, M.; Mendizabal, J. Bilbao de; Casse, G. et al.
In: Journal of Instrumentation, Vol. 11, P07019, 07.2016.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Benoit, M, Mendizabal, JBD, Casse, G, Chen, K, Bello, FAD, Ferrere, D, Golling, T, Gonzalez-Sevilla, S, Iacobucci, G, Lanni, F, Liu, H, Meloni, F, Meng, L, Miucci, A, Muenstermann, D, Nessi, M, Peric, I, Rimoldi, M, Ristic, B, Pinto, MVB, Vossebeld, J, Weber, M, Wu, W & Xu, L 2016, 'Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype', Journal of Instrumentation, vol. 11, P07019. https://doi.org/10.1088/1748-0221/11/07/P07019

APA

Benoit, M., Mendizabal, J. B. D., Casse, G., Chen, K., Bello, F. A. D., Ferrere, D., Golling, T., Gonzalez-Sevilla, S., Iacobucci, G., Lanni, F., Liu, H., Meloni, F., Meng, L., Miucci, A., Muenstermann, D., Nessi, M., Peric, I., Rimoldi, M., Ristic, B., ... Xu, L. (2016). Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype. Journal of Instrumentation, 11, Article P07019. https://doi.org/10.1088/1748-0221/11/07/P07019

Vancouver

Benoit M, Mendizabal JBD, Casse G, Chen K, Bello FAD, Ferrere D et al. Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype. Journal of Instrumentation. 2016 Jul;11:P07019. Epub 2016 Jul 21. doi: 10.1088/1748-0221/11/07/P07019

Author

Benoit, M. ; Mendizabal, J. Bilbao de ; Casse, G. et al. / Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype. In: Journal of Instrumentation. 2016 ; Vol. 11.

Bibtex

@article{418757f63d4046e1a2d88e61e69dfa00,
title = "Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype",
abstract = "Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.",
keywords = "physics.ins-det, hep-ex",
author = "M. Benoit and Mendizabal, {J. Bilbao de} and G. Casse and K. Chen and Bello, {F. A. Di} and D. Ferrere and T. Golling and S. Gonzalez-Sevilla and G. Iacobucci and F. Lanni and H. Liu and F. Meloni and L. Meng and A. Miucci and D. Muenstermann and M. Nessi and I. Peric and M. Rimoldi and B. Ristic and Pinto, {M. Vicente Barrero} and J. Vossebeld and M. Weber and W. Wu and L. Xu",
note = "16 pages, 14 figures",
year = "2016",
month = jul,
doi = "10.1088/1748-0221/11/07/P07019",
language = "English",
volume = "11",
journal = "Journal of Instrumentation",
issn = "1748-0221",
publisher = "Institute of Physics Publishing",

}

RIS

TY - JOUR

T1 - Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

AU - Benoit, M.

AU - Mendizabal, J. Bilbao de

AU - Casse, G.

AU - Chen, K.

AU - Bello, F. A. Di

AU - Ferrere, D.

AU - Golling, T.

AU - Gonzalez-Sevilla, S.

AU - Iacobucci, G.

AU - Lanni, F.

AU - Liu, H.

AU - Meloni, F.

AU - Meng, L.

AU - Miucci, A.

AU - Muenstermann, D.

AU - Nessi, M.

AU - Peric, I.

AU - Rimoldi, M.

AU - Ristic, B.

AU - Pinto, M. Vicente Barrero

AU - Vossebeld, J.

AU - Weber, M.

AU - Wu, W.

AU - Xu, L.

N1 - 16 pages, 14 figures

PY - 2016/7

Y1 - 2016/7

N2 - Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.

AB - Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.

KW - physics.ins-det

KW - hep-ex

U2 - 10.1088/1748-0221/11/07/P07019

DO - 10.1088/1748-0221/11/07/P07019

M3 - Journal article

VL - 11

JO - Journal of Instrumentation

JF - Journal of Instrumentation

SN - 1748-0221

M1 - P07019

ER -