Research output: Contribution to Journal/Magazine › Journal article › peer-review
Article number | 105016 |
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<mark>Journal publication date</mark> | 16/10/2012 |
<mark>Journal</mark> | New Journal of Physics |
Issue number | 10 |
Volume | 14 |
Number of pages | 19 |
Publication Status | Published |
<mark>Original language</mark> | English |
We investigate the signature of the low-energy electronic excitations in the Raman spectrum of monolayer and bilayer graphenes. The dominant contribution to the Raman spectra is due to the interband electron-hole (e-h) pairs, which belong to the irreducible representation A(2) of the point group C-6v of the graphene lattice, and are characterized by crossed polarization of incoming and outgoing photons. At high magnetic fields, this is manifested by the excitation of e-h inter-Landau-level (LL) transitions with selection rule n(-) -> n(+). Weaker Raman-active inter-LL modes also exist. One of those has a selection rule similar to the infrared absorption process, n(-) -> (n +/- 1)(+), but the created e-h excitation belongs to the irreducible representation E-2 (rather than E-1) and couples to the optical phonon mode, thus undergoing an anticrossing with the optical phonon G-line in Raman in a strong magnetic field. The fine structure acquired by the G-line due to such anticrossing depends on the carrier density, inhomogeneity of doping and presence of inhomogeneous strain in the sample.