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Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography

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Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography. / Durrani, Zahid A. K.; Jones, Mervyn E.; Abualnaja, Faris; Wang, Chen; Kaestner, Marcus; Lenk, Steve; Lenk, Claudia; Rangelow, Ivo W.; Andreev, Aleksey.

In: Journal of Applied Physics, Vol. 124, No. 14, 144502, 14.10.2018.

Research output: Contribution to journalJournal articlepeer-review

Harvard

Durrani, ZAK, Jones, ME, Abualnaja, F, Wang, C, Kaestner, M, Lenk, S, Lenk, C, Rangelow, IW & Andreev, A 2018, 'Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography', Journal of Applied Physics, vol. 124, no. 14, 144502. https://doi.org/10.1063/1.5050773

APA

Durrani, Z. A. K., Jones, M. E., Abualnaja, F., Wang, C., Kaestner, M., Lenk, S., Lenk, C., Rangelow, I. W., & Andreev, A. (2018). Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography. Journal of Applied Physics, 124(14), [144502]. https://doi.org/10.1063/1.5050773

Vancouver

Durrani ZAK, Jones ME, Abualnaja F, Wang C, Kaestner M, Lenk S et al. Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography. Journal of Applied Physics. 2018 Oct 14;124(14). 144502. https://doi.org/10.1063/1.5050773

Author

Durrani, Zahid A. K. ; Jones, Mervyn E. ; Abualnaja, Faris ; Wang, Chen ; Kaestner, Marcus ; Lenk, Steve ; Lenk, Claudia ; Rangelow, Ivo W. ; Andreev, Aleksey. / Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography. In: Journal of Applied Physics. 2018 ; Vol. 124, No. 14.

Bibtex

@article{bea850860c8a44e0a7ed2c10d4f25d1a,
title = "Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography",
abstract = "Electrical operation of room-temperature (RT) single dopant atom quantum dot (QD) transistors,based on phosphorous atoms isolated within nanoscale SiO2 tunnel barriers, is presented. In contrast to single dopant transistors in silicon, where the QD potential well is shallow and device operation limited to cryogenic temperature, here, a deep (∼2 eV) potential well allows electron confinement at RT. Our transistors use ∼10 nm size scale Si/SiO2/Si point-contact tunnel junctions, defined by scanning probe lithography and geometric oxidation. “Coulomb diamond” charge stability plots are measured at 290 K, with QD addition energy ∼0.3 eV. Theoretical simulation gives a QD size of similar order to the phosphorous atom separation ∼2 nm. Extraction of energy states predicts an anharmonic QD potential, fitted using a Morse oscillator-like potential. The results extend single-atom transistor operation to RT, enable tunneling spectroscopy of impurity atoms in insulators, and allow the energy landscape for P atoms in SiO2 to be determined.",
author = "Durrani, {Zahid A. K.} and Jones, {Mervyn E.} and Faris Abualnaja and Chen Wang and Marcus Kaestner and Steve Lenk and Claudia Lenk and Rangelow, {Ivo W.} and Aleksey Andreev",
year = "2018",
month = oct,
day = "14",
doi = "10.1063/1.5050773",
language = "English",
volume = "124",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AMER INST PHYSICS",
number = "14",

}

RIS

TY - JOUR

T1 - Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography

AU - Durrani, Zahid A. K.

AU - Jones, Mervyn E.

AU - Abualnaja, Faris

AU - Wang, Chen

AU - Kaestner, Marcus

AU - Lenk, Steve

AU - Lenk, Claudia

AU - Rangelow, Ivo W.

AU - Andreev, Aleksey

PY - 2018/10/14

Y1 - 2018/10/14

N2 - Electrical operation of room-temperature (RT) single dopant atom quantum dot (QD) transistors,based on phosphorous atoms isolated within nanoscale SiO2 tunnel barriers, is presented. In contrast to single dopant transistors in silicon, where the QD potential well is shallow and device operation limited to cryogenic temperature, here, a deep (∼2 eV) potential well allows electron confinement at RT. Our transistors use ∼10 nm size scale Si/SiO2/Si point-contact tunnel junctions, defined by scanning probe lithography and geometric oxidation. “Coulomb diamond” charge stability plots are measured at 290 K, with QD addition energy ∼0.3 eV. Theoretical simulation gives a QD size of similar order to the phosphorous atom separation ∼2 nm. Extraction of energy states predicts an anharmonic QD potential, fitted using a Morse oscillator-like potential. The results extend single-atom transistor operation to RT, enable tunneling spectroscopy of impurity atoms in insulators, and allow the energy landscape for P atoms in SiO2 to be determined.

AB - Electrical operation of room-temperature (RT) single dopant atom quantum dot (QD) transistors,based on phosphorous atoms isolated within nanoscale SiO2 tunnel barriers, is presented. In contrast to single dopant transistors in silicon, where the QD potential well is shallow and device operation limited to cryogenic temperature, here, a deep (∼2 eV) potential well allows electron confinement at RT. Our transistors use ∼10 nm size scale Si/SiO2/Si point-contact tunnel junctions, defined by scanning probe lithography and geometric oxidation. “Coulomb diamond” charge stability plots are measured at 290 K, with QD addition energy ∼0.3 eV. Theoretical simulation gives a QD size of similar order to the phosphorous atom separation ∼2 nm. Extraction of energy states predicts an anharmonic QD potential, fitted using a Morse oscillator-like potential. The results extend single-atom transistor operation to RT, enable tunneling spectroscopy of impurity atoms in insulators, and allow the energy landscape for P atoms in SiO2 to be determined.

U2 - 10.1063/1.5050773

DO - 10.1063/1.5050773

M3 - Journal article

VL - 124

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 14

M1 - 144502

ER -