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Sb-induced phase control of InAsSb nanowires grown by molecular beam epitaxy

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Sb-induced phase control of InAsSb nanowires grown by molecular beam epitaxy. / Zhuang, Qiandong; Anyebe, Ezekiel; Chen, R.; Liu, H.; Sanchez, Ana; Rajpalke, Mohana K.; Veal, Tim D.; Wang, Z M; huang, yongzheng; Sun, H. D.

In: Nano Letters, Vol. 15, No. 2, 05.01.2015, p. 1109-1116.

Research output: Contribution to journalLetterpeer-review

Harvard

Zhuang, Q, Anyebe, E, Chen, R, Liu, H, Sanchez, A, Rajpalke, MK, Veal, TD, Wang, ZM, huang, Y & Sun, HD 2015, 'Sb-induced phase control of InAsSb nanowires grown by molecular beam epitaxy', Nano Letters, vol. 15, no. 2, pp. 1109-1116. https://doi.org/10.1021/nl5040946

APA

Zhuang, Q., Anyebe, E., Chen, R., Liu, H., Sanchez, A., Rajpalke, M. K., Veal, T. D., Wang, Z. M., huang, Y., & Sun, H. D. (2015). Sb-induced phase control of InAsSb nanowires grown by molecular beam epitaxy. Nano Letters, 15(2), 1109-1116. https://doi.org/10.1021/nl5040946

Vancouver

Zhuang Q, Anyebe E, Chen R, Liu H, Sanchez A, Rajpalke MK et al. Sb-induced phase control of InAsSb nanowires grown by molecular beam epitaxy. Nano Letters. 2015 Jan 5;15(2):1109-1116. https://doi.org/10.1021/nl5040946

Author

Zhuang, Qiandong ; Anyebe, Ezekiel ; Chen, R. ; Liu, H. ; Sanchez, Ana ; Rajpalke, Mohana K. ; Veal, Tim D. ; Wang, Z M ; huang, yongzheng ; Sun, H. D. / Sb-induced phase control of InAsSb nanowires grown by molecular beam epitaxy. In: Nano Letters. 2015 ; Vol. 15, No. 2. pp. 1109-1116.

Bibtex

@article{160e8f41e4504104a8eea1d243c7a839,
title = "Sb-induced phase control of InAsSb nanowires grown by molecular beam epitaxy",
abstract = "For the first time, we report a complete control of crystal structure in InAs1–xSbx NWs by tuning the antimony (Sb) composition. This claim is substantiated by high-resolution transmission electron microscopy combined with photoluminescence spectroscopy. The pure InAs nanowires generally show a mixture of wurtzite (WZ) and zinc-blende (ZB) phases, where addition of a small amount of Sb (∼2–4%) led to quasi-pure WZ InAsSb NWs, while further increase of Sb (∼10%) resulted in quasi-pure ZB InAsSb NWs. This phase transition is further evidenced by photoluminescence (PL) studies, where a dominant emission associated with the coexistence of WZ and ZB phases is present in the pure InAs NWs but absent in the PL spectrum of InAs0.96Sb0.04 NWs that instead shows a band-to-band emission. We also demonstrate that the Sb addition significantly reduces the stacking fault density in the NWs. This study provides new insights on the role of Sb addition for effective control of nanowire crystal structure.",
keywords = "InAsSb, nanowires, phase, molecular beam epitaxy, TEM, SEM, photoluminescence",
author = "Qiandong Zhuang and Ezekiel Anyebe and R. Chen and H. Liu and Ana Sanchez and Rajpalke, {Mohana K.} and Veal, {Tim D.} and Wang, {Z M} and yongzheng huang and Sun, {H. D.}",
year = "2015",
month = jan,
day = "5",
doi = "10.1021/nl5040946",
language = "English",
volume = "15",
pages = "1109--1116",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "2",

}

RIS

TY - JOUR

T1 - Sb-induced phase control of InAsSb nanowires grown by molecular beam epitaxy

AU - Zhuang, Qiandong

AU - Anyebe, Ezekiel

AU - Chen, R.

AU - Liu, H.

AU - Sanchez, Ana

AU - Rajpalke, Mohana K.

AU - Veal, Tim D.

AU - Wang, Z M

AU - huang, yongzheng

AU - Sun, H. D.

PY - 2015/1/5

Y1 - 2015/1/5

N2 - For the first time, we report a complete control of crystal structure in InAs1–xSbx NWs by tuning the antimony (Sb) composition. This claim is substantiated by high-resolution transmission electron microscopy combined with photoluminescence spectroscopy. The pure InAs nanowires generally show a mixture of wurtzite (WZ) and zinc-blende (ZB) phases, where addition of a small amount of Sb (∼2–4%) led to quasi-pure WZ InAsSb NWs, while further increase of Sb (∼10%) resulted in quasi-pure ZB InAsSb NWs. This phase transition is further evidenced by photoluminescence (PL) studies, where a dominant emission associated with the coexistence of WZ and ZB phases is present in the pure InAs NWs but absent in the PL spectrum of InAs0.96Sb0.04 NWs that instead shows a band-to-band emission. We also demonstrate that the Sb addition significantly reduces the stacking fault density in the NWs. This study provides new insights on the role of Sb addition for effective control of nanowire crystal structure.

AB - For the first time, we report a complete control of crystal structure in InAs1–xSbx NWs by tuning the antimony (Sb) composition. This claim is substantiated by high-resolution transmission electron microscopy combined with photoluminescence spectroscopy. The pure InAs nanowires generally show a mixture of wurtzite (WZ) and zinc-blende (ZB) phases, where addition of a small amount of Sb (∼2–4%) led to quasi-pure WZ InAsSb NWs, while further increase of Sb (∼10%) resulted in quasi-pure ZB InAsSb NWs. This phase transition is further evidenced by photoluminescence (PL) studies, where a dominant emission associated with the coexistence of WZ and ZB phases is present in the pure InAs NWs but absent in the PL spectrum of InAs0.96Sb0.04 NWs that instead shows a band-to-band emission. We also demonstrate that the Sb addition significantly reduces the stacking fault density in the NWs. This study provides new insights on the role of Sb addition for effective control of nanowire crystal structure.

KW - InAsSb

KW - nanowires

KW - phase

KW - molecular beam epitaxy

KW - TEM

KW - SEM

KW - photoluminescence

U2 - 10.1021/nl5040946

DO - 10.1021/nl5040946

M3 - Letter

VL - 15

SP - 1109

EP - 1116

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 2

ER -