Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Scalable and site specific functionalization of reduced graphene oxide for circuit elements and flexible electronics
AU - Soni, Mahesh
AU - Kumar, Pawan
AU - Pandey, Juhi
AU - Kumar Sharma, Satinder
AU - Soni, Ajay
PY - 2018/3/1
Y1 - 2018/3/1
N2 - We demonstrate a rapid and facile approach towards scalable patterning of reduced graphene oxide (rGO) for interconnects in flexible electronic applications. We have used controlled UV light exposure for patterning of rGO over spin coated GO film, which has been demonstrated by various patterns of GO-rGO. Optical and conductivity contrast has been supported by spectroscopic data for GO and rGO regions. Electrical conductivity of completely exposed rGO (60 mS/m) is significantly (∼150 times) higher than unexposed GO, which is suggesting effectiveness of rGO for circuit elements and interconnect applications. The tunable GO reduction is used for fabrication of rGO-FET, on flexible substrates, with completely exposed rGO as source/drain/gate electrodes and partially exposed rGO as semiconducting channel. The site specific and large area patterning of GO-rGO is advantageous for its usage in lighter and wearable flexible electronics.
AB - We demonstrate a rapid and facile approach towards scalable patterning of reduced graphene oxide (rGO) for interconnects in flexible electronic applications. We have used controlled UV light exposure for patterning of rGO over spin coated GO film, which has been demonstrated by various patterns of GO-rGO. Optical and conductivity contrast has been supported by spectroscopic data for GO and rGO regions. Electrical conductivity of completely exposed rGO (60 mS/m) is significantly (∼150 times) higher than unexposed GO, which is suggesting effectiveness of rGO for circuit elements and interconnect applications. The tunable GO reduction is used for fabrication of rGO-FET, on flexible substrates, with completely exposed rGO as source/drain/gate electrodes and partially exposed rGO as semiconducting channel. The site specific and large area patterning of GO-rGO is advantageous for its usage in lighter and wearable flexible electronics.
KW - Reduced graphene oxide
KW - Metal-free interconnects
KW - Patterning for flexible electronics
KW - rGO-FET device
U2 - 10.1016/j.carbon.2017.11.087
DO - 10.1016/j.carbon.2017.11.087
M3 - Journal article
VL - 128
SP - 172
EP - 178
JO - Carbon
JF - Carbon
SN - 0008-6223
ER -