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Schottky current in carbon nanotube-metal contact

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Schottky current in carbon nanotube-metal contact. / Sangtarash, Sara; Sadeghi, Hatef; Ahmadi, M. T. et al.
In: Journal of Computational and Theoretical Nanoscience, Vol. 9, No. 10, 10.2012, p. 1554-1557.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Sangtarash, S, Sadeghi, H, Ahmadi, MT, Ghadiry, MH, Anwar, S & Ismail, R 2012, 'Schottky current in carbon nanotube-metal contact', Journal of Computational and Theoretical Nanoscience, vol. 9, no. 10, pp. 1554-1557. https://doi.org/10.1166/jctn.2012.2243

APA

Sangtarash, S., Sadeghi, H., Ahmadi, M. T., Ghadiry, M. H., Anwar, S., & Ismail, R. (2012). Schottky current in carbon nanotube-metal contact. Journal of Computational and Theoretical Nanoscience, 9(10), 1554-1557. https://doi.org/10.1166/jctn.2012.2243

Vancouver

Sangtarash S, Sadeghi H, Ahmadi MT, Ghadiry MH, Anwar S, Ismail R. Schottky current in carbon nanotube-metal contact. Journal of Computational and Theoretical Nanoscience. 2012 Oct;9(10):1554-1557. doi: 10.1166/jctn.2012.2243

Author

Sangtarash, Sara ; Sadeghi, Hatef ; Ahmadi, M. T. et al. / Schottky current in carbon nanotube-metal contact. In: Journal of Computational and Theoretical Nanoscience. 2012 ; Vol. 9, No. 10. pp. 1554-1557.

Bibtex

@article{8d49d1eedfea438487f9e45fabdf4f73,
title = "Schottky current in carbon nanotube-metal contact",
abstract = "Silicon based technology has received its technical limitation because of its unstable structure at nano-level. Carbon nanotube as an alternative material has attracted significant scientific efforts. Fabrication of Schottky diode using carbon nanotube is an open area of research to overcome this limit. In this study, we model the current of CNT Schottky diode under applied voltage. Parabolic band approximation on CNT induces Fermi-Dirac integral of order zero on its current voltage which is similar to the conventional one dimensional material. This model shows that its current has a weak dependence on temperature corresponding to the small applied voltage. It is quite different in high bias voltages which are independent of temperature. Based on this model, incremental effect of the carbon nanotube diameter has been explained by increasing the current with the applied voltage. The model presented in this paper is in good agreement with the reported data from experiments. This device can be used in the integrated circuit miniaturization.",
keywords = "Carbon Nanotube, Schottky Contact, Schottky Current, Modeling, DIODE",
author = "Sara Sangtarash and Hatef Sadeghi and Ahmadi, {M. T.} and Ghadiry, {M. H.} and Sohail Anwar and Razali Ismail",
year = "2012",
month = oct,
doi = "10.1166/jctn.2012.2243",
language = "English",
volume = "9",
pages = "1554--1557",
journal = "Journal of Computational and Theoretical Nanoscience",
issn = "1546-1955",
publisher = "American Scientific Publishers",
number = "10",

}

RIS

TY - JOUR

T1 - Schottky current in carbon nanotube-metal contact

AU - Sangtarash, Sara

AU - Sadeghi, Hatef

AU - Ahmadi, M. T.

AU - Ghadiry, M. H.

AU - Anwar, Sohail

AU - Ismail, Razali

PY - 2012/10

Y1 - 2012/10

N2 - Silicon based technology has received its technical limitation because of its unstable structure at nano-level. Carbon nanotube as an alternative material has attracted significant scientific efforts. Fabrication of Schottky diode using carbon nanotube is an open area of research to overcome this limit. In this study, we model the current of CNT Schottky diode under applied voltage. Parabolic band approximation on CNT induces Fermi-Dirac integral of order zero on its current voltage which is similar to the conventional one dimensional material. This model shows that its current has a weak dependence on temperature corresponding to the small applied voltage. It is quite different in high bias voltages which are independent of temperature. Based on this model, incremental effect of the carbon nanotube diameter has been explained by increasing the current with the applied voltage. The model presented in this paper is in good agreement with the reported data from experiments. This device can be used in the integrated circuit miniaturization.

AB - Silicon based technology has received its technical limitation because of its unstable structure at nano-level. Carbon nanotube as an alternative material has attracted significant scientific efforts. Fabrication of Schottky diode using carbon nanotube is an open area of research to overcome this limit. In this study, we model the current of CNT Schottky diode under applied voltage. Parabolic band approximation on CNT induces Fermi-Dirac integral of order zero on its current voltage which is similar to the conventional one dimensional material. This model shows that its current has a weak dependence on temperature corresponding to the small applied voltage. It is quite different in high bias voltages which are independent of temperature. Based on this model, incremental effect of the carbon nanotube diameter has been explained by increasing the current with the applied voltage. The model presented in this paper is in good agreement with the reported data from experiments. This device can be used in the integrated circuit miniaturization.

KW - Carbon Nanotube

KW - Schottky Contact

KW - Schottky Current

KW - Modeling

KW - DIODE

U2 - 10.1166/jctn.2012.2243

DO - 10.1166/jctn.2012.2243

M3 - Journal article

VL - 9

SP - 1554

EP - 1557

JO - Journal of Computational and Theoretical Nanoscience

JF - Journal of Computational and Theoretical Nanoscience

SN - 1546-1955

IS - 10

ER -