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  1. Published

    Sb-induced phase control of InAsSb nanowires grown by molecular beam epitaxy

    Zhuang, Q., Anyebe, E., Chen, R., Liu, H., Sanchez, A., Rajpalke, M. K., Veal, T. D., Wang, Z. M., huang, Y. & Sun, H. D., 5/01/2015, In: Nano Letters. 15, 2, p. 1109-1116 8 p.

    Research output: Contribution to Journal/MagazineLetterpeer-review

  2. Published

    Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice

    Zhuang, Q., Li, J. M., Wang, X. X., Zeng, Y. P., Wang, Y. T., Wang, B. Q., Pan, L., Wu, J., Kong, M. Y. & Lin, L. Y., 2000, In: Journal of Crystal Growth. 208, 1-4, p. 791-794 4 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  3. Published

    Room temperature photoluminescence at 4.5 mu m from InAsN

    Zhuang, Q., Godenir, A. M. R., Krier, A., Lai, K. T. & Haywood, S. K., 26/03/2008, In: Journal of Applied Physics. 103, 6, p. 063520

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  4. Published

    Molecular beam epitaxial (MBE) growth and spectroscopy of dilute nitride InAsN:Sb for mid-infrared applications.

    Zhuang, Q. & Krier, A., 15/12/2009, In: IET Optoelectronics. 3, 6, p. 248-258 11 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  5. Published

    Visible Light Positioning and Navigation with Noise Mitigation Using Allan Variance

    Zhuang, Y., Hua, L., Wang, Q., Cao, Y., Gao, Z., Qi, L., Yang, J. & Thompson, J., 1/11/2019, In: IEEE Transactions on Vehicular Technology. 68, 11, p. 11094 - 11106 13 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  6. Published

    Effect of rapid thermal annealing on InGaAs/GaAs quantum wells

    Zhuang, Q., Li, J. M., Zeng, Y. P., Yoon, S. F., Zheng, H. Q., Kong, M. Y. & Lin, L. Y., 2000, In: Journal of Crystal Growth. 212, 1-2, p. 352-355 4 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  7. Published

    Self-organization of the InGaAs/GaAs quantum dots superlattice

    Zhuang, Q., Li, H., Pan, L., Li, J., Kong, M. & Lin, L., 1999, In: Journal of Crystal Growth. 201-202, 1-4, p. 1161-1163 3 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  8. Published

    Molecular beam epitaxial growth of InAsN : Sb for midinfrared Optoelectronics

    Zhuang, Q., Godenir, A., Krier, A., Tsai, G. & Lin, H. H., 22/09/2008, In: Applied Physics Letters. 93, 12, p. 121903

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  9. Published

    Constraints on the collision and the pre-collision tectonic configuration between India and Asia from detrital geochronology, thermochronology, and geochemistry studies in the lower Indus basin, Pakistan

    Zhuang, G., Najman, Y. M. R., Guillot, S., Roddaz, M., Antoine, P-O., Metais, G., Carter, A., Marivaux, L. & Solangi, S. H., 15/12/2015, In: Earth and Planetary Science Letters. 432, p. 363-373 11 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  10. Published

    Asymmetric dark current in double-barrier quantum well infrared photodetectors

    Zhuang, Q., Li, J. & Lin, L., 1998, In: Proceedings of the Society of Photo-Optical Instrumentation Engineers . 3437, p. 391-395 5 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

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