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Effect of rapid thermal annealing on InGaAs/GaAs quantum wells

Research output: Contribution to Journal/MagazineJournal articlepeer-review

<mark>Journal publication date</mark>2000
<mark>Journal</mark>Journal of Crystal Growth
Issue number1-2
Number of pages4
Pages (from-to)352-355
Publication StatusPublished
<mark>Original language</mark>English


We have studied the effect of rapid thermal annealing (RTA) on highly strained InGaAs/GaAs quantum wells by using photoluminescence (PL) and double-crystal X-ray diffraction (DCXRD) measurements. It is found that a distinct additional PL emission peak can be observed for the annealed samples. This PL emission possesses features similar to the PL emission from InGaAs/GaAs quantum dots (QDs) with the same indium content. It is proposed that this emission stems from QDs, which were formed during the annealing process. This formation is attributed to the favorable diffusion due to the inhomogeneous strain distribution in the InGaAs layer intersurface. The DCXRD measurements also confirm that the dominant relaxation is strain enhanced diffusion under the low annealing temperatures.