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  1. Unpublished

    Effect of As supply on nitrogen incorporation of MBE grown Ga(In)Nas/GaAs quantum well.

    Zhuang, Q. D. & Stanley, C., 2004, (Unpublished) Proceedings of the 13th international semiconducting and insulating materials conference. Beijing, China

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  2. Published

    Growth of self-organized InAs quantum dots on InP by solid-source molecular beam epitaxy

    Zhuang, Q., Yoon, S. F., Zheng, H. Q. & Yuan, K. H., 2000, In: Journal of Crystal Growth. 216, 1-4, p. 57-61 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    Photoluminescence in InAsN epilayers grown by molecular beam epitaxy

    Zhuang, Q., Godenir, A. & Krier, A., 10/06/2008, In: Journal of Physics D: Applied Physics. 41, 13, p. 132002

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    Sb-induced phase control of InAsSb nanowires grown by molecular beam epitaxy

    Zhuang, Q., Anyebe, E., Chen, R., Liu, H., Sanchez, A., Rajpalke, M. K., Veal, T. D., Wang, Z. M., huang, Y. & Sun, H. D., 5/01/2015, In: Nano Letters. 15, 2, p. 1109-1116 8 p.

    Research output: Contribution to Journal/Magazine › Letter › peer-review

  5. Published

    Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice

    Zhuang, Q., Li, J. M., Wang, X. X., Zeng, Y. P., Wang, Y. T., Wang, B. Q., Pan, L., Wu, J., Kong, M. Y. & Lin, L. Y., 2000, In: Journal of Crystal Growth. 208, 1-4, p. 791-794 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    Room temperature photoluminescence at 4.5 mu m from InAsN

    Zhuang, Q., Godenir, A. M. R., Krier, A., Lai, K. T. & Haywood, S. K., 26/03/2008, In: Journal of Applied Physics. 103, 6, p. 063520

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. Published

    Molecular beam epitaxial (MBE) growth and spectroscopy of dilute nitride InAsN:Sb for mid-infrared applications.

    Zhuang, Q. & Krier, A., 15/12/2009, In: IET Optoelectronics. 3, 6, p. 248-258 11 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. Published

    Visible Light Positioning and Navigation with Noise Mitigation Using Allan Variance

    Zhuang, Y., Hua, L., Wang, Q., Cao, Y., Gao, Z., Qi, L., Yang, J. & Thompson, J., 1/11/2019, In: IEEE Transactions on Vehicular Technology. 68, 11, p. 11094 - 11106 13 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    Effect of rapid thermal annealing on InGaAs/GaAs quantum wells

    Zhuang, Q., Li, J. M., Zeng, Y. P., Yoon, S. F., Zheng, H. Q., Kong, M. Y. & Lin, L. Y., 2000, In: Journal of Crystal Growth. 212, 1-2, p. 352-355 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    Self-organization of the InGaAs/GaAs quantum dots superlattice

    Zhuang, Q., Li, H., Pan, L., Li, J., Kong, M. & Lin, L., 1999, In: Journal of Crystal Growth. 201-202, 1-4, p. 1161-1163 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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