Rights statement: This is the author’s version of a work that was accepted for publication in Chem. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Chem, ?, ?, 2019 DOI: 10.1016/j.chempr.2018.12.008
Accepted author manuscript, 1.3 MB, PDF document
Available under license: CC BY-NC-ND
Final published version
Research output: Contribution to Journal/Magazine › Journal article › peer-review
| <mark>Journal publication date</mark> | 14/02/2019 |
|---|---|
| <mark>Journal</mark> | Chem |
| Issue number | 2 |
| Volume | 5 |
| Number of pages | 11 |
| Pages (from-to) | 474-484 |
| Publication Status | Published |
| Early online date | 24/01/19 |
| <mark>Original language</mark> | English |
If single-molecule, room-temperature, quantum interference (QI) effects could be translated into massively parallel arrays of molecules located between planar electrodes, QI-controlled molecular transistors would become available as building blocks for future electronic devices. Here, we demonstrate unequivocal signatures of room-temperature QI in vertical tunneling transistors, formed from self-assembled monolayers (SAMs), with stable room-temperature switching operations. As a result of constructive QI effects, the conductances of the junctions formed from anthanthrene-based molecules with two different connectivities differ by a factor of 34, which can further increase to 173 by controlling the molecule-electrode interface with different terminal groups. Field-effect control is achieved using an ionic liquid gate, whose strong vertical electric field penetrates through the graphene layer and tunes the energy levels of the SAMs. The resulting room-temperature on-off current ratio of the lowest-conductance SAMs can reach up to 306, about one order of magnitude higher than that of the highest-conductance SAMs.