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Si measurements: SiO<inf>x</inf> on Si

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Si measurements: SiO<inf>x</inf> on Si. / Tekin, Serdar B.
2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). IEEE, 2017.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

Harvard

Tekin, SB 2017, Si measurements: SiO<inf>x</inf> on Si. in 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). IEEE. https://doi.org/10.1109/ulis.2017.7962571

APA

Tekin, S. B. (2017). Si measurements: SiO<inf>x</inf> on Si. In 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) IEEE. https://doi.org/10.1109/ulis.2017.7962571

Vancouver

Tekin SB. Si measurements: SiO<inf>x</inf> on Si. In 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). IEEE. 2017 doi: 10.1109/ulis.2017.7962571

Author

Tekin, Serdar B. / Si measurements: SiO<inf>x</inf> on Si. 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). IEEE, 2017.

Bibtex

@inproceedings{9c4ae4fb1cb145f3809cfd63f393ea87,
title = "Si measurements: SiOx on Si",
abstract = "We review the results of silicon measurements, which we have performed on suboxide SiO x formed on n and p type Si wafers with different surface textures. Localized vibrational modes through Raman and FTIR, light emission properties by photoluminescence (PL), energy critical points for optical transitions, excited state dynamics and non-linear electrical properties can be used as effective methods in investigating thin oxide layers on Si. Infrared vibrational spectrum of Si-O-Si bondings in terms of transverse-optic (TO) and longitudinal-optic (LO) phonons indicating that disorder induced LO-TO optical mode coupling can be an effective tool in assessing the structural quality of the SiOx. Excited carrier dynamics and switching mechanisms can provide critical information about electronic quality of sub oxides for applications in CMOS circuits.",
author = "Tekin, {Serdar B.}",
year = "2017",
month = jul,
day = "3",
doi = "10.1109/ulis.2017.7962571",
language = "English",
booktitle = "2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)",
publisher = "IEEE",

}

RIS

TY - GEN

T1 - Si measurements: SiOx on Si

AU - Tekin, Serdar B.

PY - 2017/7/3

Y1 - 2017/7/3

N2 - We review the results of silicon measurements, which we have performed on suboxide SiO x formed on n and p type Si wafers with different surface textures. Localized vibrational modes through Raman and FTIR, light emission properties by photoluminescence (PL), energy critical points for optical transitions, excited state dynamics and non-linear electrical properties can be used as effective methods in investigating thin oxide layers on Si. Infrared vibrational spectrum of Si-O-Si bondings in terms of transverse-optic (TO) and longitudinal-optic (LO) phonons indicating that disorder induced LO-TO optical mode coupling can be an effective tool in assessing the structural quality of the SiOx. Excited carrier dynamics and switching mechanisms can provide critical information about electronic quality of sub oxides for applications in CMOS circuits.

AB - We review the results of silicon measurements, which we have performed on suboxide SiO x formed on n and p type Si wafers with different surface textures. Localized vibrational modes through Raman and FTIR, light emission properties by photoluminescence (PL), energy critical points for optical transitions, excited state dynamics and non-linear electrical properties can be used as effective methods in investigating thin oxide layers on Si. Infrared vibrational spectrum of Si-O-Si bondings in terms of transverse-optic (TO) and longitudinal-optic (LO) phonons indicating that disorder induced LO-TO optical mode coupling can be an effective tool in assessing the structural quality of the SiOx. Excited carrier dynamics and switching mechanisms can provide critical information about electronic quality of sub oxides for applications in CMOS circuits.

U2 - 10.1109/ulis.2017.7962571

DO - 10.1109/ulis.2017.7962571

M3 - Conference contribution/Paper

BT - 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

PB - IEEE

ER -