Simulation of Si nanowire quantum-dot devices for authentication

Research output: Contribution to conference - Without ISBN/ISSN › Conference paper › peer-review

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Simulation of Si nanowire quantum-dot devices for authentication. / Carrillo-Nunez, H.; Wang, C.; Asenov, A. et al.
2019. Paper presented at 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon , Grenoble, France.

Research output: Contribution to conference - Without ISBN/ISSN › Conference paper › peer-review

Harvard

Carrillo-Nunez, H, Wang, C, Asenov, A, Young, R & Georgiev, V 2019, 'Simulation of Si nanowire quantum-dot devices for authentication', Paper presented at 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon , Grenoble, France, 1/04/19 - 3/04/19. https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041864

APA

Carrillo-Nunez, H., Wang, C., Asenov, A., Young, R., & Georgiev, V. (2019). Simulation of Si nanowire quantum-dot devices for authentication. Paper presented at 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon , Grenoble, France. https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041864

Vancouver

Carrillo-Nunez H, Wang C, Asenov A, Young R, Georgiev V. Simulation of Si nanowire quantum-dot devices for authentication. 2019. Paper presented at 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon , Grenoble, France. doi: 10.1109/EUROSOI-ULIS45800.2019.9041864

Author

Carrillo-Nunez, H. ; Wang, C. ; Asenov, A. et al. / Simulation of Si nanowire quantum-dot devices for authentication. Paper presented at 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon , Grenoble, France.

Bibtex

@conference{4a907c8e15724a2db16127006dd3096f,

title = "Simulation of Si nanowire quantum-dot devices for authentication",

abstract = "This paper shows quantum mechanical simulations of quantum-dots (QDs) embedded within Si nanowires. To capture the effect of statistical sources of variability, we simulated 60 wires with differing numbers and positions of dopants, not only in the quantum dot but also at the source and the drain regions also. Our work shows that the specific number of dopants and their positions give rise to unique current-voltage characteristics, providing unique signatures for use as the basis of physical unclonable functions (PUFs). Adoption of hardware security devices for authentication is on the rise; the technology proposed here delivers a practical means to extract fingerprints from quantum confined systems that could provide robust security to silicon electronics. {\textcopyright} 2019 IEEE.",

keywords = "Physical Unclonable Function, quantum mechanical simulations, resonant tunneling quantum-dots, Authentication, Cryptography, Current voltage characteristics, Hardware security, Nanocrystals, Nanowires, Network security, Drain region, Quantum confined systems, Quantum dot devices, Quantum mechanical simulations, Robust security, Si nanowire, Silicon electronics, Statistical sources, Semiconductor quantum dots",

author = "H. Carrillo-Nunez and C. Wang and A. Asenov and R. Young and V. Georgiev",

note = "Export Date: 29 April 2020; 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon , EUROSOI-ULIS '19 ; Conference date: 01-04-2019 Through 03-04-2019",

year = "2019",

month = apr,

day = "1",

doi = "10.1109/EUROSOI-ULIS45800.2019.9041864",

language = "English",

url = "https://ieeexplore.ieee.org/xpl/conhome/9035087/proceeding",

}

RIS

TY - CONF

T1 - Simulation of Si nanowire quantum-dot devices for authentication

AU - Carrillo-Nunez, H.

AU - Wang, C.

AU - Asenov, A.

AU - Young, R.

AU - Georgiev, V.

N1 - Export Date: 29 April 2020

PY - 2019/4/1

Y1 - 2019/4/1

N2 - This paper shows quantum mechanical simulations of quantum-dots (QDs) embedded within Si nanowires. To capture the effect of statistical sources of variability, we simulated 60 wires with differing numbers and positions of dopants, not only in the quantum dot but also at the source and the drain regions also. Our work shows that the specific number of dopants and their positions give rise to unique current-voltage characteristics, providing unique signatures for use as the basis of physical unclonable functions (PUFs). Adoption of hardware security devices for authentication is on the rise; the technology proposed here delivers a practical means to extract fingerprints from quantum confined systems that could provide robust security to silicon electronics. © 2019 IEEE.

AB - This paper shows quantum mechanical simulations of quantum-dots (QDs) embedded within Si nanowires. To capture the effect of statistical sources of variability, we simulated 60 wires with differing numbers and positions of dopants, not only in the quantum dot but also at the source and the drain regions also. Our work shows that the specific number of dopants and their positions give rise to unique current-voltage characteristics, providing unique signatures for use as the basis of physical unclonable functions (PUFs). Adoption of hardware security devices for authentication is on the rise; the technology proposed here delivers a practical means to extract fingerprints from quantum confined systems that could provide robust security to silicon electronics. © 2019 IEEE.

KW - Physical Unclonable Function

KW - quantum mechanical simulations

KW - resonant tunneling quantum-dots

KW - Authentication

KW - Cryptography

KW - Current voltage characteristics

KW - Hardware security

KW - Nanocrystals

KW - Nanowires

KW - Network security

KW - Drain region

KW - Quantum confined systems

KW - Quantum dot devices

KW - Quantum mechanical simulations

KW - Robust security

KW - Si nanowire

KW - Silicon electronics

KW - Statistical sources

KW - Semiconductor quantum dots

U2 - 10.1109/EUROSOI-ULIS45800.2019.9041864

DO - 10.1109/EUROSOI-ULIS45800.2019.9041864

M3 - Conference paper

T2 - 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon

Y2 - 1 April 2019 through 3 April 2019

ER -

Research

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