Final published version
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Single-electron and quantum confinement limits in length-scaled silicon nanowires
AU - Wang, Chen
AU - Jones, Mervyn E.
AU - Durrani, Zahid A. K.
PY - 2015/7/31
Y1 - 2015/7/31
N2 - Quantum-effects will play an important role in both future CMOS and ‘beyond CMOS’ technologies. By comparing single-electron transistors formed in un-patterned, uniform-width silicon nanowire (SiNW) devices with core widths from ∼5–40 nm, and gated lengths of 1 μm and ∼50 nm, we show conditions under which these effects become significant. Coulomb blockade drain–source current–voltage characteristics, and single-electron current oscillations with gate voltage have been observed at room temperature. Detailed electrical characteristics have been measured from 8–300 K. We show that while shortening the nanowire gate length to 50 nm reduces the likelihood of quantum dots to only a few, it increases their influence on the electrical characteristics. This highlights explicitly both the significance of quantum effects for understanding the electrical performance of nominally ‘classical’ SiNW devices and also their potential for new quantum effect ‘beyond CMOS’ devices.
AB - Quantum-effects will play an important role in both future CMOS and ‘beyond CMOS’ technologies. By comparing single-electron transistors formed in un-patterned, uniform-width silicon nanowire (SiNW) devices with core widths from ∼5–40 nm, and gated lengths of 1 μm and ∼50 nm, we show conditions under which these effects become significant. Coulomb blockade drain–source current–voltage characteristics, and single-electron current oscillations with gate voltage have been observed at room temperature. Detailed electrical characteristics have been measured from 8–300 K. We show that while shortening the nanowire gate length to 50 nm reduces the likelihood of quantum dots to only a few, it increases their influence on the electrical characteristics. This highlights explicitly both the significance of quantum effects for understanding the electrical performance of nominally ‘classical’ SiNW devices and also their potential for new quantum effect ‘beyond CMOS’ devices.
KW - silicon nanowires
KW - single electron effects
KW - quantum dots
KW - oom temperature single electron transistor
U2 - 10.1088/0957-4484/26/30/305203
DO - 10.1088/0957-4484/26/30/305203
M3 - Journal article
VL - 26
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 30
M1 - 305203
ER -