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Single-electron devices with a mechanical degree of freedom

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Single-electron devices with a mechanical degree of freedom. / Pashkin, Yu A.; Pekola, J. P.; Knyazev, D. A. et al.
In: Journal of Physics: Conference Series, Vol. 400, No. PART 5, 052028, 2012.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Pashkin, YA, Pekola, JP, Knyazev, DA, Li, TF, Kafanov, S, Astafiev, O & Tsai, JS 2012, 'Single-electron devices with a mechanical degree of freedom', Journal of Physics: Conference Series, vol. 400, no. PART 5, 052028. https://doi.org/10.1088/1742-6596/400/5/052028

APA

Pashkin, Y. A., Pekola, J. P., Knyazev, D. A., Li, T. F., Kafanov, S., Astafiev, O., & Tsai, J. S. (2012). Single-electron devices with a mechanical degree of freedom. Journal of Physics: Conference Series, 400(PART 5), Article 052028. https://doi.org/10.1088/1742-6596/400/5/052028

Vancouver

Pashkin YA, Pekola JP, Knyazev DA, Li TF, Kafanov S, Astafiev O et al. Single-electron devices with a mechanical degree of freedom. Journal of Physics: Conference Series. 2012;400(PART 5):052028. doi: 10.1088/1742-6596/400/5/052028

Author

Pashkin, Yu A. ; Pekola, J. P. ; Knyazev, D. A. et al. / Single-electron devices with a mechanical degree of freedom. In: Journal of Physics: Conference Series. 2012 ; Vol. 400, No. PART 5.

Bibtex

@article{c98df9fb6146488e919b3e1c25e4301f,
title = "Single-electron devices with a mechanical degree of freedom",
abstract = "We have succeeded in integrating a single-electron transistor (SET) and a nanomechanical resonator into one device by suspending the SET island. In this case the island has flexural modes whose resonance frequencies depend on the material parameters and the island dimensions. The device is made of Al and can be studied in both the normal and superconducting states allowing observation of various physical phenomena. By driving the resonator with an external force at a frequency close to the resonance frequency of the fundamental flexural mode, we observe a characteristic feature in the dc SET transport, which is due to the mechanical resonance of the island. The resonance frequency as high as 0.5 GHz was detected. The observed response is reproduced in the simulations based on the semiclassical model of single-electron tunneling with the mechanical degree of freedom taken into account. Besides the studies of charge transport in single-electron circuits, the device can also be used for investigation of quantum effects in the charge qubits with a mechanical degree of freedom.",
author = "Pashkin, {Yu A.} and Pekola, {J. P.} and Knyazev, {D. A.} and Li, {T. F.} and Sergey Kafanov and O. Astafiev and Tsai, {J. S.}",
year = "2012",
doi = "10.1088/1742-6596/400/5/052028",
language = "English",
volume = "400",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "PART 5",

}

RIS

TY - JOUR

T1 - Single-electron devices with a mechanical degree of freedom

AU - Pashkin, Yu A.

AU - Pekola, J. P.

AU - Knyazev, D. A.

AU - Li, T. F.

AU - Kafanov, Sergey

AU - Astafiev, O.

AU - Tsai, J. S.

PY - 2012

Y1 - 2012

N2 - We have succeeded in integrating a single-electron transistor (SET) and a nanomechanical resonator into one device by suspending the SET island. In this case the island has flexural modes whose resonance frequencies depend on the material parameters and the island dimensions. The device is made of Al and can be studied in both the normal and superconducting states allowing observation of various physical phenomena. By driving the resonator with an external force at a frequency close to the resonance frequency of the fundamental flexural mode, we observe a characteristic feature in the dc SET transport, which is due to the mechanical resonance of the island. The resonance frequency as high as 0.5 GHz was detected. The observed response is reproduced in the simulations based on the semiclassical model of single-electron tunneling with the mechanical degree of freedom taken into account. Besides the studies of charge transport in single-electron circuits, the device can also be used for investigation of quantum effects in the charge qubits with a mechanical degree of freedom.

AB - We have succeeded in integrating a single-electron transistor (SET) and a nanomechanical resonator into one device by suspending the SET island. In this case the island has flexural modes whose resonance frequencies depend on the material parameters and the island dimensions. The device is made of Al and can be studied in both the normal and superconducting states allowing observation of various physical phenomena. By driving the resonator with an external force at a frequency close to the resonance frequency of the fundamental flexural mode, we observe a characteristic feature in the dc SET transport, which is due to the mechanical resonance of the island. The resonance frequency as high as 0.5 GHz was detected. The observed response is reproduced in the simulations based on the semiclassical model of single-electron tunneling with the mechanical degree of freedom taken into account. Besides the studies of charge transport in single-electron circuits, the device can also be used for investigation of quantum effects in the charge qubits with a mechanical degree of freedom.

U2 - 10.1088/1742-6596/400/5/052028

DO - 10.1088/1742-6596/400/5/052028

M3 - Journal article

AN - SCOPUS:84873646319

VL - 400

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - PART 5

M1 - 052028

ER -