Home > Research > Publications & Outputs > Single-electron tunneling through an individual...


Text available via DOI:

View graph of relations

Single-electron tunneling through an individual arsenic dopant in silicon

Research output: Contribution to Journal/MagazineJournal articlepeer-review

  • V. V. Shorokhov
  • D. E. Presnov
  • S. V. Amitonov
  • Yuri Pashkin
  • V. A. Krupenin
<mark>Journal publication date</mark>14/01/2017
Issue number2
Number of pages8
Pages (from-to)613-620
Publication StatusPublished
Early online date24/11/16
<mark>Original language</mark>English


We report the single-electron tunneling behaviour of a silicon nanobridge where the effective island is a single As dopant atom. The device is a gated silicon nanobridge with a thickness and width of ∼20 nm, fabricated from a commercially available silicon-on-insulator wafer, which was first doped with As atoms and then patterned using a unique CMOS-compatible technique. Transport measurements reveal characteristic Coulomb diamonds whose size decreases with gate voltage. Such a dependence indicates that the island of the single-electron transistor created is an individual arsenic dopant atom embedded in the silicon lattice between the source and drain electrodes, and furthermore, can be explained by the increase of the localisation region of the electron wavefunction when the higher energy levels of the dopant As atom become occupied. The charge stability diagram of the device shows features which can be attributed to adjacent dopants, localised in the nanobridge, acting as charge traps. From the measured device transport, we have evaluated the tunnel barrier properties and obtained characteristic device capacitances. The fabrication, control and understanding of such “single-atom” devices marks a further step towards the implementation of single-atom electronics.