Home > Research > Publications & Outputs > Single-Shot Measurement of Triplet-Singlet Rela...

Associated organisational unit

View graph of relations

Single-Shot Measurement of Triplet-Singlet Relaxation in a Si/SiGe Double Quantum Dot

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Published

Standard

Single-Shot Measurement of Triplet-Singlet Relaxation in a Si/SiGe Double Quantum Dot. / Prance, J. R.; Shi, Zhan; Simmons, C. B. et al.
In: Physical review letters, Vol. 108, No. 4, 046808, 26.01.2012, p. -.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Prance, JR, Shi, Z, Simmons, CB, Savage, DE, Lagally, MG, Schreiber, LR, Vandersypen, LMK, Friesen, M, Joynt, R, Coppersmith, SN & Eriksson, MA 2012, 'Single-Shot Measurement of Triplet-Singlet Relaxation in a Si/SiGe Double Quantum Dot', Physical review letters, vol. 108, no. 4, 046808, pp. -. https://doi.org/10.1103/PhysRevLett.108.046808

APA

Prance, J. R., Shi, Z., Simmons, C. B., Savage, D. E., Lagally, M. G., Schreiber, L. R., Vandersypen, L. M. K., Friesen, M., Joynt, R., Coppersmith, S. N., & Eriksson, M. A. (2012). Single-Shot Measurement of Triplet-Singlet Relaxation in a Si/SiGe Double Quantum Dot. Physical review letters, 108(4), -. Article 046808. https://doi.org/10.1103/PhysRevLett.108.046808

Vancouver

Prance JR, Shi Z, Simmons CB, Savage DE, Lagally MG, Schreiber LR et al. Single-Shot Measurement of Triplet-Singlet Relaxation in a Si/SiGe Double Quantum Dot. Physical review letters. 2012 Jan 26;108(4):-. 046808. doi: 10.1103/PhysRevLett.108.046808

Author

Prance, J. R. ; Shi, Zhan ; Simmons, C. B. et al. / Single-Shot Measurement of Triplet-Singlet Relaxation in a Si/SiGe Double Quantum Dot. In: Physical review letters. 2012 ; Vol. 108, No. 4. pp. -.

Bibtex

@article{8a0405de0fd840739e9edfd6b22e1eef,
title = "Single-Shot Measurement of Triplet-Singlet Relaxation in a Si/SiGe Double Quantum Dot",
abstract = "We investigate the lifetime of two-electron spin states in a few-electron Si/SiGe double dot. At the transition between the (1,1) and (0,2) charge occupations, Pauli spin blockade provides a readout mechanism for the spin state. We use the statistics of repeated single-shot measurements to extract the lifetimes of multiple states simultaneously. When the magnetic field is zero, we find that all three triplet states have equal lifetimes, as expected, and this time is similar to 10 ms. When the field is nonzero, the T-0 lifetime is unchanged, whereas the T_ lifetime increases monotonically with the field, reaching 3 sec at 1 T.",
author = "Prance, {J. R.} and Zhan Shi and Simmons, {C. B.} and Savage, {D. E.} and Lagally, {M. G.} and Schreiber, {L. R.} and Vandersypen, {L. M. K.} and Mark Friesen and Robert Joynt and Coppersmith, {S. N.} and Eriksson, {M. A.}",
year = "2012",
month = jan,
day = "26",
doi = "10.1103/PhysRevLett.108.046808",
language = "English",
volume = "108",
pages = "--",
journal = "Physical review letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "4",

}

RIS

TY - JOUR

T1 - Single-Shot Measurement of Triplet-Singlet Relaxation in a Si/SiGe Double Quantum Dot

AU - Prance, J. R.

AU - Shi, Zhan

AU - Simmons, C. B.

AU - Savage, D. E.

AU - Lagally, M. G.

AU - Schreiber, L. R.

AU - Vandersypen, L. M. K.

AU - Friesen, Mark

AU - Joynt, Robert

AU - Coppersmith, S. N.

AU - Eriksson, M. A.

PY - 2012/1/26

Y1 - 2012/1/26

N2 - We investigate the lifetime of two-electron spin states in a few-electron Si/SiGe double dot. At the transition between the (1,1) and (0,2) charge occupations, Pauli spin blockade provides a readout mechanism for the spin state. We use the statistics of repeated single-shot measurements to extract the lifetimes of multiple states simultaneously. When the magnetic field is zero, we find that all three triplet states have equal lifetimes, as expected, and this time is similar to 10 ms. When the field is nonzero, the T-0 lifetime is unchanged, whereas the T_ lifetime increases monotonically with the field, reaching 3 sec at 1 T.

AB - We investigate the lifetime of two-electron spin states in a few-electron Si/SiGe double dot. At the transition between the (1,1) and (0,2) charge occupations, Pauli spin blockade provides a readout mechanism for the spin state. We use the statistics of repeated single-shot measurements to extract the lifetimes of multiple states simultaneously. When the magnetic field is zero, we find that all three triplet states have equal lifetimes, as expected, and this time is similar to 10 ms. When the field is nonzero, the T-0 lifetime is unchanged, whereas the T_ lifetime increases monotonically with the field, reaching 3 sec at 1 T.

UR - http://www.scopus.com/inward/record.url?scp=84856301914&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.108.046808

DO - 10.1103/PhysRevLett.108.046808

M3 - Journal article

VL - 108

SP - -

JO - Physical review letters

JF - Physical review letters

SN - 0031-9007

IS - 4

M1 - 046808

ER -