Rights statement: This is the peer reviewed version of the following article: M. Esro, O. Kolosov, V. Stolojan, P. J. Jones, W. I. Milne, G. Adamopoulos, Adv. Electron. Mater. 2017, 1700025 which has been published in final form at http://onlinelibrary.wiley.com/doi/10.1002/aelm.201700025/abstract This article may be used for non-commercial purposes in accordance With Wiley Terms and Conditions for self-archiving.
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Research output: Contribution to Journal/Magazine › Journal article › peer-review
Solution-Processed Neodymium Oxide/ZnO Thin-Film Transistors with Electron Mobility in Excess of 65 cm V−1 s−1. / Bin Esro, Mazran; Kolosov, Oleg Victor; Stolojan, Vlad et al.
In: Advanced Electronic Materials, Vol. 3, No. 4, 1700025, 04.2017.Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Solution-Processed Neodymium Oxide/ZnO Thin-Film Transistors with Electron Mobility in Excess of 65 cm V−1 s−1
AU - Bin Esro, Mazran
AU - Kolosov, Oleg Victor
AU - Stolojan, Vlad
AU - Jones, Peter John
AU - Milne, W.I.
AU - Adamopoulos, George
N1 - This is the peer reviewed version of the following article: M. Esro, O. Kolosov, V. Stolojan, P. J. Jones, W. I. Milne, G. Adamopoulos, Adv. Electron. Mater. 2017, 1700025 which has been published in final form at http://onlinelibrary.wiley.com/doi/10.1002/aelm.201700025/abstract This article may be used for non-commercial purposes in accordance With Wiley Terms and Conditions for self-archiving.
PY - 2017/4
Y1 - 2017/4
N2 - This work reports on solution processed Nd2O3 thin films that are deposited under ambient conditions at moderate temperatures of about 400 °C and their implementation as gate dielectrics in thin film transistors employing solution processed ZnO semiconducting channels is also demonstrated. The optical, dielectric, electric, structural, surface, and interface properties of Nd2O3 films are investigated using a wide range of characterization techniques that reveal smooth Nd2O3 films of cubic structure, wide bandgap (6 eV), high-k (11), and low leakage currents (<0.5 nA cm−2). Thin film transistors (TFTs) using ZnO channels show excellent characteristics, such as high electron mobility, in excess of 65 cm2 V−1 s−1, high on/off current ratio in the range between 106 and 107, and negligible hysteresis. The devices demonstrate excellent constant bias stress and air stability air, i.e., only a small decrease of the electron mobility and threshold voltage (<12%). In addition, the excellent uniformity and homogeneity that is demonstrated combined with the relatively low deposition temperature (compared with those used with the vast majority of the vacuum based techniques employed) in ambient air on glass substrates indicates the potential for the rapid development of metal oxide-based TFTs employing gate dielectrics also grown from solutions at low manufacturing cost.
AB - This work reports on solution processed Nd2O3 thin films that are deposited under ambient conditions at moderate temperatures of about 400 °C and their implementation as gate dielectrics in thin film transistors employing solution processed ZnO semiconducting channels is also demonstrated. The optical, dielectric, electric, structural, surface, and interface properties of Nd2O3 films are investigated using a wide range of characterization techniques that reveal smooth Nd2O3 films of cubic structure, wide bandgap (6 eV), high-k (11), and low leakage currents (<0.5 nA cm−2). Thin film transistors (TFTs) using ZnO channels show excellent characteristics, such as high electron mobility, in excess of 65 cm2 V−1 s−1, high on/off current ratio in the range between 106 and 107, and negligible hysteresis. The devices demonstrate excellent constant bias stress and air stability air, i.e., only a small decrease of the electron mobility and threshold voltage (<12%). In addition, the excellent uniformity and homogeneity that is demonstrated combined with the relatively low deposition temperature (compared with those used with the vast majority of the vacuum based techniques employed) in ambient air on glass substrates indicates the potential for the rapid development of metal oxide-based TFTs employing gate dielectrics also grown from solutions at low manufacturing cost.
KW - Gate dielectrics
KW - neodymium oxide
KW - Solution Processed Electronics
KW - spray pyrolysis
KW - thin film transistors
U2 - 10.1002/aelm.201700025
DO - 10.1002/aelm.201700025
M3 - Journal article
VL - 3
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
SN - 2199-160X
IS - 4
M1 - 1700025
ER -