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Spin memory and spin-lattice relaxation in two-dimensional hexagonal crystals

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Spin memory and spin-lattice relaxation in two-dimensional hexagonal crystals. / Ochoa, H.; Guinea, F.; Falko, Vladimir.
In: Physical review B, Vol. 88, No. 19, 195417, 15.11.2013.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Ochoa, H, Guinea, F & Falko, V 2013, 'Spin memory and spin-lattice relaxation in two-dimensional hexagonal crystals', Physical review B, vol. 88, no. 19, 195417. https://doi.org/10.1103/PhysRevB.88.195417

APA

Ochoa, H., Guinea, F., & Falko, V. (2013). Spin memory and spin-lattice relaxation in two-dimensional hexagonal crystals. Physical review B, 88(19), Article 195417. https://doi.org/10.1103/PhysRevB.88.195417

Vancouver

Ochoa H, Guinea F, Falko V. Spin memory and spin-lattice relaxation in two-dimensional hexagonal crystals. Physical review B. 2013 Nov 15;88(19):195417. doi: 10.1103/PhysRevB.88.195417

Author

Ochoa, H. ; Guinea, F. ; Falko, Vladimir. / Spin memory and spin-lattice relaxation in two-dimensional hexagonal crystals. In: Physical review B. 2013 ; Vol. 88, No. 19.

Bibtex

@article{e7b0530cba4541fe877a6adcf7f6c5ed,
title = "Spin memory and spin-lattice relaxation in two-dimensional hexagonal crystals",
abstract = "We propose a theory of spin relaxation of electrons and holes in two-dimensional hexagonal crystals such as atomic layers of transition-metal dichalcogenides (MoS2, WSe2, etc.). We show that, even in intrinsically defect-free crystals, their flexural deformations are able to generate spin relaxation of carriers. Based on symmetry analysis, we formulate a generic model for spin-lattice coupling between electrons and flexural deformations and use it to determine temperature- and material-dependent spin lifetimes in atomic crystals in ambient conditions.",
keywords = "VALLEY POLARIZATION, MOS2, TRANSISTORS, LAYERS",
author = "H. Ochoa and F. Guinea and Vladimir Falko",
year = "2013",
month = nov,
day = "15",
doi = "10.1103/PhysRevB.88.195417",
language = "English",
volume = "88",
journal = "Physical review B",
issn = "1098-0121",
publisher = "AMER PHYSICAL SOC",
number = "19",

}

RIS

TY - JOUR

T1 - Spin memory and spin-lattice relaxation in two-dimensional hexagonal crystals

AU - Ochoa, H.

AU - Guinea, F.

AU - Falko, Vladimir

PY - 2013/11/15

Y1 - 2013/11/15

N2 - We propose a theory of spin relaxation of electrons and holes in two-dimensional hexagonal crystals such as atomic layers of transition-metal dichalcogenides (MoS2, WSe2, etc.). We show that, even in intrinsically defect-free crystals, their flexural deformations are able to generate spin relaxation of carriers. Based on symmetry analysis, we formulate a generic model for spin-lattice coupling between electrons and flexural deformations and use it to determine temperature- and material-dependent spin lifetimes in atomic crystals in ambient conditions.

AB - We propose a theory of spin relaxation of electrons and holes in two-dimensional hexagonal crystals such as atomic layers of transition-metal dichalcogenides (MoS2, WSe2, etc.). We show that, even in intrinsically defect-free crystals, their flexural deformations are able to generate spin relaxation of carriers. Based on symmetry analysis, we formulate a generic model for spin-lattice coupling between electrons and flexural deformations and use it to determine temperature- and material-dependent spin lifetimes in atomic crystals in ambient conditions.

KW - VALLEY POLARIZATION

KW - MOS2

KW - TRANSISTORS

KW - LAYERS

U2 - 10.1103/PhysRevB.88.195417

DO - 10.1103/PhysRevB.88.195417

M3 - Journal article

VL - 88

JO - Physical review B

JF - Physical review B

SN - 1098-0121

IS - 19

M1 - 195417

ER -