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  • PhysRevB.77.035317

    Rights statement: © 2008 The American Physical Society

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Spin-orbit-assisted electron-phonon interaction and the magnetophonon resonance in semiconductor quantum wells

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Spin-orbit-assisted electron-phonon interaction and the magnetophonon resonance in semiconductor quantum wells. / Abergel, D. S. L.; Falko, Vladimir.

In: Physical review B, Vol. 77, No. 3, 035317, 15.01.2008.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

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Abergel DSL, Falko V. Spin-orbit-assisted electron-phonon interaction and the magnetophonon resonance in semiconductor quantum wells. Physical review B. 2008 Jan 15;77(3):035317. doi: 10.1103/PhysRevB.77.035317

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@article{c7227db19fb94c93ab8d1c6eea657c5f,
title = "Spin-orbit-assisted electron-phonon interaction and the magnetophonon resonance in semiconductor quantum wells",
abstract = "We introduce a spin-orbit assisted electron-phonon (e-ph) coupling mechanism for carriers in semiconductor quantum wells and predict qualitatively the form and shape of anticrossings between the cyclotron resonance (CR) and optical (LO and TO) phonons. Since this e-ph interaction involves the electron spin it makes the predicted TO-CR anticrossing dependent on the filling factor and therefore on the spin polarization of the two-dimensional electron gas in the quantum well.",
author = "Abergel, {D. S. L.} and Vladimir Falko",
note = "{\textcopyright} 2008 The American Physical Society",
year = "2008",
month = jan,
day = "15",
doi = "10.1103/PhysRevB.77.035317",
language = "English",
volume = "77",
journal = "Physical Review B: Condensed Matter and Materials Physics",
issn = "1098-0121",
publisher = "AMER PHYSICAL SOC",
number = "3",

}

RIS

TY - JOUR

T1 - Spin-orbit-assisted electron-phonon interaction and the magnetophonon resonance in semiconductor quantum wells

AU - Abergel, D. S. L.

AU - Falko, Vladimir

N1 - © 2008 The American Physical Society

PY - 2008/1/15

Y1 - 2008/1/15

N2 - We introduce a spin-orbit assisted electron-phonon (e-ph) coupling mechanism for carriers in semiconductor quantum wells and predict qualitatively the form and shape of anticrossings between the cyclotron resonance (CR) and optical (LO and TO) phonons. Since this e-ph interaction involves the electron spin it makes the predicted TO-CR anticrossing dependent on the filling factor and therefore on the spin polarization of the two-dimensional electron gas in the quantum well.

AB - We introduce a spin-orbit assisted electron-phonon (e-ph) coupling mechanism for carriers in semiconductor quantum wells and predict qualitatively the form and shape of anticrossings between the cyclotron resonance (CR) and optical (LO and TO) phonons. Since this e-ph interaction involves the electron spin it makes the predicted TO-CR anticrossing dependent on the filling factor and therefore on the spin polarization of the two-dimensional electron gas in the quantum well.

U2 - 10.1103/PhysRevB.77.035317

DO - 10.1103/PhysRevB.77.035317

M3 - Journal article

VL - 77

JO - Physical Review B: Condensed Matter and Materials Physics

JF - Physical Review B: Condensed Matter and Materials Physics

SN - 1098-0121

IS - 3

M1 - 035317

ER -