TY - CONF

T1 - Structural and electrical characterization of SiO2 gate dielectrics grown from solutions at moderate temperature in air

AU - Bin Esro, Mazran

AU - Kolosov, Oleg Victor

AU - Cho, Jun Hee

AU - Milne, W.I.

AU - Adamopoulos, George

PY - 2016/5

Y1 - 2016/5

N2 - Silicon dioxide is the most widely used dielectric material for optical and electronic applications. Production of SiO2 has been achieved by thermal oxidation of silicon, plasma enhanced chemical vapour deposition, sputtering, electron beam evaporation, atomic layer deposition etc. The conventional production of SiO2 by thermal oxidation by necessity requires the use of Si as the substrate and the other methods either produce low quality/poor interface material and/or require high deposition temperatures. Here, we report on the deposition and characterisation of SiO2 gate dielectrics grown by spray coating in air at moderate temperatures i.e. 350 oC from SiCl4 solutions in pentane-2,4-dione (0.1 M). SiO2 films on ITO were investigated by means of x-ray diffraction, XPS, UFM/AFM, admittance spectroscopy, UV?Vis absorption spectroscopy, spectroscopic ellipsometry, and field-effect measurements. Analyses of spray coated films reveal smooth films (RRMS< 1 nm) of amorphous phase with dielectric constant of 3.8, optical band gap of 8.1 eV (by extrapolation) and leakage currents of 10-7 A/cm2 at 1 MV/cm. XPS measurements further confirm SiO2 structures and FTIR spectra show features related to SiO2 only. Thin film transistors based on thermally grown C60 and pentacene semiconducting channels employing both spray coated as well as thermally grown SiO2 gate dielectrics exhibit identical transport characteristics in terms of hysteresis, leakage currents, carrier mobility and on/off current modulation ratio.

AB - Silicon dioxide is the most widely used dielectric material for optical and electronic applications. Production of SiO2 has been achieved by thermal oxidation of silicon, plasma enhanced chemical vapour deposition, sputtering, electron beam evaporation, atomic layer deposition etc. The conventional production of SiO2 by thermal oxidation by necessity requires the use of Si as the substrate and the other methods either produce low quality/poor interface material and/or require high deposition temperatures. Here, we report on the deposition and characterisation of SiO2 gate dielectrics grown by spray coating in air at moderate temperatures i.e. 350 oC from SiCl4 solutions in pentane-2,4-dione (0.1 M). SiO2 films on ITO were investigated by means of x-ray diffraction, XPS, UFM/AFM, admittance spectroscopy, UV?Vis absorption spectroscopy, spectroscopic ellipsometry, and field-effect measurements. Analyses of spray coated films reveal smooth films (RRMS< 1 nm) of amorphous phase with dielectric constant of 3.8, optical band gap of 8.1 eV (by extrapolation) and leakage currents of 10-7 A/cm2 at 1 MV/cm. XPS measurements further confirm SiO2 structures and FTIR spectra show features related to SiO2 only. Thin film transistors based on thermally grown C60 and pentacene semiconducting channels employing both spray coated as well as thermally grown SiO2 gate dielectrics exhibit identical transport characteristics in terms of hysteresis, leakage currents, carrier mobility and on/off current modulation ratio.

UR - http://www.european-mrs.com/2016-spring-symposium-aa-european-materials-research-society

M3 - Speech

T2 - EMRS 2016 Spring Meeting

Y2 - 2 May 2016 through 6 May 2016

ER -