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Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures

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Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures. / Zhuang, Qiandong; Li, J. M.; Zeng, Y. P.; Pan, L.; Li, H. X.; Kong, M.Y.; Lin, L. Y.

In: Journal of Crystal Growth, Vol. 200, No. 3-4, 1999, p. 375-381.

Research output: Contribution to journalJournal articlepeer-review

Harvard

Zhuang, Q, Li, JM, Zeng, YP, Pan, L, Li, HX, Kong, MY & Lin, LY 1999, 'Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures', Journal of Crystal Growth, vol. 200, no. 3-4, pp. 375-381. https://doi.org/10.1016/S0022-0248(99)00059-7

APA

Zhuang, Q., Li, J. M., Zeng, Y. P., Pan, L., Li, H. X., Kong, M. Y., & Lin, L. Y. (1999). Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures. Journal of Crystal Growth, 200(3-4), 375-381. https://doi.org/10.1016/S0022-0248(99)00059-7

Vancouver

Author

Zhuang, Qiandong ; Li, J. M. ; Zeng, Y. P. ; Pan, L. ; Li, H. X. ; Kong, M.Y. ; Lin, L. Y. / Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures. In: Journal of Crystal Growth. 1999 ; Vol. 200, No. 3-4. pp. 375-381.

Bibtex

@article{68408242754b4f6b9c51b279be35ce7c,
title = "Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures",
abstract = "InGaAs/GaAs quantum dots (QDs) superlattice grown by molecular beam epitaxy (MBE) at different substrate temperatures for fabricating 8–12 μm infrared photodetector were characterized by transmission electron microscopy (TEM), double-crystal X-ray diffraction (DCXRD) and photoluminescence (PL). High-quality QDs superlattice can be achieved by higher growth temperature. Cross-sectional TEM shows the QDs in the successive layers are vertically aligned along growth direction. Interaction of partial vertically aligned columns leads to a perfect vertical ordering. With increasing number of bilayers, the average QDs size becomes larger in height and rapidly saturates at a certain value, while average lateral length nearly preserves initial size. This change leads to the formation of QDs homogeneous in size and of a particular shape. The observed self-organizations are attributed to the effect of strain distribution at QDs on the kinetic growth process. DCXRD measurement shows two sets of satellite peaks which corresponds to QDs superlattice and multi quantum wells formed by the wetting layers. Kinematical simulations of the wetting layers indicate that the formation of QDs is associated with a decrease of the effective indium content in the wetting layers.",
keywords = "InGaAs/GaAs, Quantum dots, Superlattice, Structure, TEM, X-ray",
author = "Qiandong Zhuang and Li, {J. M.} and Zeng, {Y. P.} and L. Pan and Li, {H. X.} and M.Y. Kong and Lin, {L. Y.}",
year = "1999",
doi = "10.1016/S0022-0248(99)00059-7",
language = "English",
volume = "200",
pages = "375--381",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "3-4",

}

RIS

TY - JOUR

T1 - Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures

AU - Zhuang, Qiandong

AU - Li, J. M.

AU - Zeng, Y. P.

AU - Pan, L.

AU - Li, H. X.

AU - Kong, M.Y.

AU - Lin, L. Y.

PY - 1999

Y1 - 1999

N2 - InGaAs/GaAs quantum dots (QDs) superlattice grown by molecular beam epitaxy (MBE) at different substrate temperatures for fabricating 8–12 μm infrared photodetector were characterized by transmission electron microscopy (TEM), double-crystal X-ray diffraction (DCXRD) and photoluminescence (PL). High-quality QDs superlattice can be achieved by higher growth temperature. Cross-sectional TEM shows the QDs in the successive layers are vertically aligned along growth direction. Interaction of partial vertically aligned columns leads to a perfect vertical ordering. With increasing number of bilayers, the average QDs size becomes larger in height and rapidly saturates at a certain value, while average lateral length nearly preserves initial size. This change leads to the formation of QDs homogeneous in size and of a particular shape. The observed self-organizations are attributed to the effect of strain distribution at QDs on the kinetic growth process. DCXRD measurement shows two sets of satellite peaks which corresponds to QDs superlattice and multi quantum wells formed by the wetting layers. Kinematical simulations of the wetting layers indicate that the formation of QDs is associated with a decrease of the effective indium content in the wetting layers.

AB - InGaAs/GaAs quantum dots (QDs) superlattice grown by molecular beam epitaxy (MBE) at different substrate temperatures for fabricating 8–12 μm infrared photodetector were characterized by transmission electron microscopy (TEM), double-crystal X-ray diffraction (DCXRD) and photoluminescence (PL). High-quality QDs superlattice can be achieved by higher growth temperature. Cross-sectional TEM shows the QDs in the successive layers are vertically aligned along growth direction. Interaction of partial vertically aligned columns leads to a perfect vertical ordering. With increasing number of bilayers, the average QDs size becomes larger in height and rapidly saturates at a certain value, while average lateral length nearly preserves initial size. This change leads to the formation of QDs homogeneous in size and of a particular shape. The observed self-organizations are attributed to the effect of strain distribution at QDs on the kinetic growth process. DCXRD measurement shows two sets of satellite peaks which corresponds to QDs superlattice and multi quantum wells formed by the wetting layers. Kinematical simulations of the wetting layers indicate that the formation of QDs is associated with a decrease of the effective indium content in the wetting layers.

KW - InGaAs/GaAs

KW - Quantum dots

KW - Superlattice

KW - Structure

KW - TEM

KW - X-ray

U2 - 10.1016/S0022-0248(99)00059-7

DO - 10.1016/S0022-0248(99)00059-7

M3 - Journal article

VL - 200

SP - 375

EP - 381

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 3-4

ER -