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Supply current monitoring in cmos circuits for reliability prediction and test.

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Supply current monitoring in cmos circuits for reliability prediction and test. / Richardson, A. M. D.; Dorey, A. P.

In: Quality and Reliability Engineering International, Vol. 8, No. 6, 1992, p. 543-548.

Research output: Contribution to journalJournal article

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Richardson, A. M. D. ; Dorey, A. P. / Supply current monitoring in cmos circuits for reliability prediction and test. In: Quality and Reliability Engineering International. 1992 ; Vol. 8, No. 6. pp. 543-548.

Bibtex

@article{5d84ce30f5b34f0ca5d46fe34f8901f5,
title = "Supply current monitoring in cmos circuits for reliability prediction and test.",
abstract = "The monitoring of supply current in CMOS VLSI devices has been suggested as a tool for both detecting reliability hazards and increasing the effectiveness of standard functional testing. This paper reviews these techniques and describes a method used at Lancaster for evaluating the IDDQ test.",
keywords = "IDDQ • Reliability testing • Reliability indicators • Supply current testing • VLSI testing",
author = "Richardson, {A. M. D.} and Dorey, {A. P.}",
year = "1992",
doi = "10.1002/qre.4680080606",
language = "English",
volume = "8",
pages = "543--548",
journal = "Quality and Reliability Engineering International",
issn = "0748-8017",
publisher = "John Wiley and Sons Ltd",
number = "6",

}

RIS

TY - JOUR

T1 - Supply current monitoring in cmos circuits for reliability prediction and test.

AU - Richardson, A. M. D.

AU - Dorey, A. P.

PY - 1992

Y1 - 1992

N2 - The monitoring of supply current in CMOS VLSI devices has been suggested as a tool for both detecting reliability hazards and increasing the effectiveness of standard functional testing. This paper reviews these techniques and describes a method used at Lancaster for evaluating the IDDQ test.

AB - The monitoring of supply current in CMOS VLSI devices has been suggested as a tool for both detecting reliability hazards and increasing the effectiveness of standard functional testing. This paper reviews these techniques and describes a method used at Lancaster for evaluating the IDDQ test.

KW - IDDQ • Reliability testing • Reliability indicators • Supply current testing • VLSI testing

U2 - 10.1002/qre.4680080606

DO - 10.1002/qre.4680080606

M3 - Journal article

VL - 8

SP - 543

EP - 548

JO - Quality and Reliability Engineering International

JF - Quality and Reliability Engineering International

SN - 0748-8017

IS - 6

ER -