Suspended single-electron transistor as a detector of its nanomechanical motion

Physics

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Suspended single-electron transistor as a detector of its nanomechanical motion. / Pashkin, Yuri; Li, Tiefu; Pekola, Jukka et al.
ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology. IEEE, 2010. p. 340-342.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Chapter

Harvard

Pashkin, Y, Li, T, Pekola, J, Astafiev, O, Knyazev, D, Hoehne, F, Im, H, Nakamura, Y & Tsai, JS 2010, Suspended single-electron transistor as a detector of its nanomechanical motion. in ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology. IEEE, pp. 340-342, ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology, Sydney, Australia, 22/02/10. https://doi.org/10.1109/ICONN.2010.6045266

APA

Pashkin, Y., Li, T., Pekola, J., Astafiev, O., Knyazev, D., Hoehne, F., Im, H., Nakamura, Y., & Tsai, J. S. (2010). Suspended single-electron transistor as a detector of its nanomechanical motion. In ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology (pp. 340-342). IEEE. https://doi.org/10.1109/ICONN.2010.6045266

Vancouver

Pashkin Y, Li T, Pekola J, Astafiev O, Knyazev D, Hoehne F et al. Suspended single-electron transistor as a detector of its nanomechanical motion. In ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology. IEEE. 2010. p. 340-342 doi: 10.1109/ICONN.2010.6045266

Author

Pashkin, Yuri ; Li, Tiefu ; Pekola, Jukka et al. / Suspended single-electron transistor as a detector of its nanomechanical motion. ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology. IEEE, 2010. pp. 340-342

Bibtex

@inbook{78455b2979664585b7a9e33ae3163fc4,

title = "Suspended single-electron transistor as a detector of its nanomechanical motion",

abstract = "We have fabricated an Al based single-electron transistor transistor (SET) whose island is suspended above the substrate. The structure can be considered as a two-in-one device containing a doubly clamped beam and a transducer that converts mechanical vibrations into variations in the SET current. In addition to the regular side gate, a bottom gate with a large capacitance, is placed beneath the SET island for increasing the SET coupling to the mechanical motion. The observed response is reproduced in our simulations, which are based on the orthodox model that considers the fundamental flexural mode of the resonating SET island.",

keywords = "Doubly clamped beam, Nanomechanical resonator, Single-electron transistor, Transducer",

author = "Yuri Pashkin and Tiefu Li and Jukka Pekola and Oleg Astafiev and Dmitry Knyazev and Felix Hoehne and Hyunsik Im and Yasunobu Nakamura and Tsai, {Jaw Shen}",

year = "2010",

doi = "10.1109/ICONN.2010.6045266",

language = "English",

isbn = "9781424452613",

pages = "340--342",

booktitle = "ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology",

publisher = "IEEE",

note = "ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology ; Conference date: 22-02-2010 Through 26-02-2010",

}

RIS

TY - CHAP

T1 - Suspended single-electron transistor as a detector of its nanomechanical motion

AU - Pashkin, Yuri

AU - Li, Tiefu

AU - Pekola, Jukka

AU - Astafiev, Oleg

AU - Knyazev, Dmitry

AU - Hoehne, Felix

AU - Im, Hyunsik

AU - Nakamura, Yasunobu

AU - Tsai, Jaw Shen

PY - 2010

Y1 - 2010

N2 - We have fabricated an Al based single-electron transistor transistor (SET) whose island is suspended above the substrate. The structure can be considered as a two-in-one device containing a doubly clamped beam and a transducer that converts mechanical vibrations into variations in the SET current. In addition to the regular side gate, a bottom gate with a large capacitance, is placed beneath the SET island for increasing the SET coupling to the mechanical motion. The observed response is reproduced in our simulations, which are based on the orthodox model that considers the fundamental flexural mode of the resonating SET island.

AB - We have fabricated an Al based single-electron transistor transistor (SET) whose island is suspended above the substrate. The structure can be considered as a two-in-one device containing a doubly clamped beam and a transducer that converts mechanical vibrations into variations in the SET current. In addition to the regular side gate, a bottom gate with a large capacitance, is placed beneath the SET island for increasing the SET coupling to the mechanical motion. The observed response is reproduced in our simulations, which are based on the orthodox model that considers the fundamental flexural mode of the resonating SET island.

KW - Doubly clamped beam

KW - Nanomechanical resonator

KW - Single-electron transistor

KW - Transducer

U2 - 10.1109/ICONN.2010.6045266

DO - 10.1109/ICONN.2010.6045266

M3 - Chapter

SN - 9781424452613

SP - 340

EP - 342

BT - ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology

PB - IEEE

T2 - ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology

Y2 - 22 February 2010 through 26 February 2010

ER -

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