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Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes.

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Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes. / Carrington, P. J.; Zhuang, Q.; Yin, M. et al.
In: Semiconductor Science and Technology, Vol. 24, No. 7, 07.2009, p. 075001.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Carrington, PJ, Zhuang, Q, Yin, M & Krier, A 2009, 'Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes.', Semiconductor Science and Technology, vol. 24, no. 7, pp. 075001. https://doi.org/10.1088/0268-1242/24/7/075001

APA

Carrington, P. J., Zhuang, Q., Yin, M., & Krier, A. (2009). Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes. Semiconductor Science and Technology, 24(7), 075001. https://doi.org/10.1088/0268-1242/24/7/075001

Vancouver

Carrington PJ, Zhuang Q, Yin M, Krier A. Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes. Semiconductor Science and Technology. 2009 Jul;24(7):075001. doi: 10.1088/0268-1242/24/7/075001

Author

Carrington, P. J. ; Zhuang, Q. ; Yin, M. et al. / Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes. In: Semiconductor Science and Technology. 2009 ; Vol. 24, No. 7. pp. 075001.

Bibtex

@article{063f658ee1e5443e8f4e22a917e63d2a,
title = "Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes.",
abstract = "Intense room temperature emission at 3.7 mu m is reported from light-emitting diodes (LEDs) which contain ten InAsSb/InAs type II multi quantum wells grown by molecular beam epitaxy. Interpretation of the spectra revealed the existence of two confined heavy-hole states with emission peaks of 0.33 and 0.37 eV at 4 K. Analysis of the temperature dependence of the electroluminescence shows that emission occurred predominantly from the excited heavy-hole state at high temperatures. At room temperature, the devices produced a quasi-cw power of 12 mu W at 100 mA injection current corresponding to an internal quantum efficiency of 2.2%.",
author = "Carrington, {P. J.} and Q. Zhuang and M. Yin and A. Krier",
year = "2009",
month = jul,
doi = "10.1088/0268-1242/24/7/075001",
language = "English",
volume = "24",
pages = "075001",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "Institute of Physics Publishing",
number = "7",

}

RIS

TY - JOUR

T1 - Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes.

AU - Carrington, P. J.

AU - Zhuang, Q.

AU - Yin, M.

AU - Krier, A.

PY - 2009/7

Y1 - 2009/7

N2 - Intense room temperature emission at 3.7 mu m is reported from light-emitting diodes (LEDs) which contain ten InAsSb/InAs type II multi quantum wells grown by molecular beam epitaxy. Interpretation of the spectra revealed the existence of two confined heavy-hole states with emission peaks of 0.33 and 0.37 eV at 4 K. Analysis of the temperature dependence of the electroluminescence shows that emission occurred predominantly from the excited heavy-hole state at high temperatures. At room temperature, the devices produced a quasi-cw power of 12 mu W at 100 mA injection current corresponding to an internal quantum efficiency of 2.2%.

AB - Intense room temperature emission at 3.7 mu m is reported from light-emitting diodes (LEDs) which contain ten InAsSb/InAs type II multi quantum wells grown by molecular beam epitaxy. Interpretation of the spectra revealed the existence of two confined heavy-hole states with emission peaks of 0.33 and 0.37 eV at 4 K. Analysis of the temperature dependence of the electroluminescence shows that emission occurred predominantly from the excited heavy-hole state at high temperatures. At room temperature, the devices produced a quasi-cw power of 12 mu W at 100 mA injection current corresponding to an internal quantum efficiency of 2.2%.

U2 - 10.1088/0268-1242/24/7/075001

DO - 10.1088/0268-1242/24/7/075001

M3 - Journal article

VL - 24

SP - 075001

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 7

ER -