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Temperature dependence of single-electron pumping using a SINIS turnstile

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Temperature dependence of single-electron pumping using a SINIS turnstile. / Nakamura, Shuji; Pashkin, Yuri; Tsai, Jaw-Shen et al.
In: Physica C: Superconductivity and its Applications, Vol. 504, 15.09.2014, p. 93-96.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Nakamura, S, Pashkin, Y, Tsai, J-S & Kaneko, N-H 2014, 'Temperature dependence of single-electron pumping using a SINIS turnstile', Physica C: Superconductivity and its Applications, vol. 504, pp. 93-96. https://doi.org/10.1016/j.physc.2014.02.023

APA

Nakamura, S., Pashkin, Y., Tsai, J-S., & Kaneko, N-H. (2014). Temperature dependence of single-electron pumping using a SINIS turnstile. Physica C: Superconductivity and its Applications, 504, 93-96. https://doi.org/10.1016/j.physc.2014.02.023

Vancouver

Nakamura S, Pashkin Y, Tsai J-S, Kaneko N-H. Temperature dependence of single-electron pumping using a SINIS turnstile. Physica C: Superconductivity and its Applications. 2014 Sept 15;504:93-96. Epub 2014 Mar 18. doi: 10.1016/j.physc.2014.02.023

Author

Nakamura, Shuji ; Pashkin, Yuri ; Tsai, Jaw-Shen et al. / Temperature dependence of single-electron pumping using a SINIS turnstile. In: Physica C: Superconductivity and its Applications. 2014 ; Vol. 504. pp. 93-96.

Bibtex

@article{a0e028aca98d4241985e45beb4a279d7,
title = "Temperature dependence of single-electron pumping using a SINIS turnstile",
abstract = "A quantum electric current standard is the last missing piece of the quantum metrology triangle. A suitable candidate for realizing this quantum current standard is a single-electron pumping device based on a superconductor/insulator/normal metal/insulator/superconductor (SINIS) turnstile. Here, we show the temperature dependence of the single-electron pumped current of a SINIS turnstile. As the operating temperatures are increased, the current plateaus of the single-electron pumping tilt because of increased back tunneling, which originates from the thermal broadening of energy levels in the normal metal island of the SINIS turnstile. Hence, we find that to use a SINIS turnstile for the current standard at more than 300 mK, it is necessary to increase the superconducting energy gaps of the lead material and the charging energy of the island.",
keywords = "Single-electron device, Quantum current standard, SINIS turnstile",
author = "Shuji Nakamura and Yuri Pashkin and Jaw-Shen Tsai and Nobu-H. Kaneko",
year = "2014",
month = sep,
day = "15",
doi = "10.1016/j.physc.2014.02.023",
language = "English",
volume = "504",
pages = "93--96",
journal = "Physica C: Superconductivity and its Applications",
issn = "0921-4534",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Temperature dependence of single-electron pumping using a SINIS turnstile

AU - Nakamura, Shuji

AU - Pashkin, Yuri

AU - Tsai, Jaw-Shen

AU - Kaneko, Nobu-H.

PY - 2014/9/15

Y1 - 2014/9/15

N2 - A quantum electric current standard is the last missing piece of the quantum metrology triangle. A suitable candidate for realizing this quantum current standard is a single-electron pumping device based on a superconductor/insulator/normal metal/insulator/superconductor (SINIS) turnstile. Here, we show the temperature dependence of the single-electron pumped current of a SINIS turnstile. As the operating temperatures are increased, the current plateaus of the single-electron pumping tilt because of increased back tunneling, which originates from the thermal broadening of energy levels in the normal metal island of the SINIS turnstile. Hence, we find that to use a SINIS turnstile for the current standard at more than 300 mK, it is necessary to increase the superconducting energy gaps of the lead material and the charging energy of the island.

AB - A quantum electric current standard is the last missing piece of the quantum metrology triangle. A suitable candidate for realizing this quantum current standard is a single-electron pumping device based on a superconductor/insulator/normal metal/insulator/superconductor (SINIS) turnstile. Here, we show the temperature dependence of the single-electron pumped current of a SINIS turnstile. As the operating temperatures are increased, the current plateaus of the single-electron pumping tilt because of increased back tunneling, which originates from the thermal broadening of energy levels in the normal metal island of the SINIS turnstile. Hence, we find that to use a SINIS turnstile for the current standard at more than 300 mK, it is necessary to increase the superconducting energy gaps of the lead material and the charging energy of the island.

KW - Single-electron device

KW - Quantum current standard

KW - SINIS turnstile

U2 - 10.1016/j.physc.2014.02.023

DO - 10.1016/j.physc.2014.02.023

M3 - Journal article

VL - 504

SP - 93

EP - 96

JO - Physica C: Superconductivity and its Applications

JF - Physica C: Superconductivity and its Applications

SN - 0921-4534

ER -