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Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots studied in high magnetic fields.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots studied in high magnetic fields. / Nuytten, Thomas; Hayne, Manus; Henini, Mohamed et al.
In: Microelectronics Journal, Vol. 40, No. 3, 03.2009, p. 486-488.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Nuytten, T, Hayne, M, Henini, M & Moshchalkov, VV 2009, 'Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots studied in high magnetic fields.', Microelectronics Journal, vol. 40, no. 3, pp. 486-488. https://doi.org/10.1016/j.mejo.2008.06.059

APA

Nuytten, T., Hayne, M., Henini, M., & Moshchalkov, V. V. (2009). Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots studied in high magnetic fields. Microelectronics Journal, 40(3), 486-488. https://doi.org/10.1016/j.mejo.2008.06.059

Vancouver

Nuytten T, Hayne M, Henini M, Moshchalkov VV. Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots studied in high magnetic fields. Microelectronics Journal. 2009 Mar;40(3):486-488. doi: 10.1016/j.mejo.2008.06.059

Author

Nuytten, Thomas ; Hayne, Manus ; Henini, Mohamed et al. / Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots studied in high magnetic fields. In: Microelectronics Journal. 2009 ; Vol. 40, No. 3. pp. 486-488.

Bibtex

@article{44f95cb61ab44da2a22b653ef4c381cd,
title = "Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots studied in high magnetic fields.",
abstract = "We have investigated the photoluminescence (PL) of self-assembled InAs/GaAs quantum dots (QDs) in high magnetic fields of up to 50 T and as a function of temperature. Our data clearly indicate that two different mechanisms are at work. At low temperatures (T < 80 K), the zero-field PL is increasingly dominated by lower energy dots. High-field measurements however demonstrate that these dots are larger in size only in the growth direction. At temperatures above 100 K, a strong decrease of the PL peak energy shift with field is observed, while the zero-field PL is characterized by a redshift according to the changes in the bandgap. We discuss these contradictory observations in terms of a phenomenon that we call field-assisted enhancement of the QD barrier potential. Since this effect is much stronger for small high-energy QDs, the latter progressively dominate the PL emission when temperature and magnetic field are increased.",
keywords = "Photoluminescence, Semiconductor quantum dots, III-V Semiconductors",
author = "Thomas Nuytten and Manus Hayne and Mohamed Henini and Moshchalkov, {Victor V.}",
note = "The final, definitive version of this article has been published in the Microelectronics Journal, 40 (3), 2009, {\textcopyright} ELSEVIER.",
year = "2009",
month = mar,
doi = "10.1016/j.mejo.2008.06.059",
language = "English",
volume = "40",
pages = "486--488",
journal = "Microelectronics Journal",
publisher = "Elsevier Limited",
number = "3",

}

RIS

TY - JOUR

T1 - Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots studied in high magnetic fields.

AU - Nuytten, Thomas

AU - Hayne, Manus

AU - Henini, Mohamed

AU - Moshchalkov, Victor V.

N1 - The final, definitive version of this article has been published in the Microelectronics Journal, 40 (3), 2009, © ELSEVIER.

PY - 2009/3

Y1 - 2009/3

N2 - We have investigated the photoluminescence (PL) of self-assembled InAs/GaAs quantum dots (QDs) in high magnetic fields of up to 50 T and as a function of temperature. Our data clearly indicate that two different mechanisms are at work. At low temperatures (T < 80 K), the zero-field PL is increasingly dominated by lower energy dots. High-field measurements however demonstrate that these dots are larger in size only in the growth direction. At temperatures above 100 K, a strong decrease of the PL peak energy shift with field is observed, while the zero-field PL is characterized by a redshift according to the changes in the bandgap. We discuss these contradictory observations in terms of a phenomenon that we call field-assisted enhancement of the QD barrier potential. Since this effect is much stronger for small high-energy QDs, the latter progressively dominate the PL emission when temperature and magnetic field are increased.

AB - We have investigated the photoluminescence (PL) of self-assembled InAs/GaAs quantum dots (QDs) in high magnetic fields of up to 50 T and as a function of temperature. Our data clearly indicate that two different mechanisms are at work. At low temperatures (T < 80 K), the zero-field PL is increasingly dominated by lower energy dots. High-field measurements however demonstrate that these dots are larger in size only in the growth direction. At temperatures above 100 K, a strong decrease of the PL peak energy shift with field is observed, while the zero-field PL is characterized by a redshift according to the changes in the bandgap. We discuss these contradictory observations in terms of a phenomenon that we call field-assisted enhancement of the QD barrier potential. Since this effect is much stronger for small high-energy QDs, the latter progressively dominate the PL emission when temperature and magnetic field are increased.

KW - Photoluminescence

KW - Semiconductor quantum dots

KW - III-V Semiconductors

U2 - 10.1016/j.mejo.2008.06.059

DO - 10.1016/j.mejo.2008.06.059

M3 - Journal article

VL - 40

SP - 486

EP - 488

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 3

ER -