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The effect of effective channel length on a Silicon Nanowire Fin Field Effect Transistor

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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The effect of effective channel length on a Silicon Nanowire Fin Field Effect Transistor. / Hamid, Fatimah K. A.; Anwar, Sohail; Amin, N. Aziziah et al.
In: Journal of Computational and Theoretical Nanoscience, Vol. 10, No. 4, 04.2013, p. 964-967.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Hamid, FKA, Anwar, S, Amin, NA, Johari, Z, Sadeghi, H, Nurudin, MA, Ahmadi, MT & Ismail, R 2013, 'The effect of effective channel length on a Silicon Nanowire Fin Field Effect Transistor', Journal of Computational and Theoretical Nanoscience, vol. 10, no. 4, pp. 964-967. https://doi.org/10.1166/jctn.2013.2793

APA

Hamid, F. K. A., Anwar, S., Amin, N. A., Johari, Z., Sadeghi, H., Nurudin, M. A., Ahmadi, M. T., & Ismail, R. (2013). The effect of effective channel length on a Silicon Nanowire Fin Field Effect Transistor. Journal of Computational and Theoretical Nanoscience, 10(4), 964-967. https://doi.org/10.1166/jctn.2013.2793

Vancouver

Hamid FKA, Anwar S, Amin NA, Johari Z, Sadeghi H, Nurudin MA et al. The effect of effective channel length on a Silicon Nanowire Fin Field Effect Transistor. Journal of Computational and Theoretical Nanoscience. 2013 Apr;10(4):964-967. doi: 10.1166/jctn.2013.2793

Author

Hamid, Fatimah K. A. ; Anwar, Sohail ; Amin, N. Aziziah et al. / The effect of effective channel length on a Silicon Nanowire Fin Field Effect Transistor. In: Journal of Computational and Theoretical Nanoscience. 2013 ; Vol. 10, No. 4. pp. 964-967.

Bibtex

@article{baea1f682b5b47b2883a923c58f8de01,
title = "The effect of effective channel length on a Silicon Nanowire Fin Field Effect Transistor",
abstract = "Silicon Nanowire Fin Field Effect Transistor (SiNWFinFET) is a unique transistor in which all of its gates wrap the insulator and inner layer of silicon. In this paper, the effective channel length effect on Silicon Nanowire FinFET is presented, based on the quantum confinement effects. The analytical model of current voltage incorporated with the effects of channel length modulation, is developed, and verified with published experimental data. The results show that by considering the channel length modulation effect, the SiNWFinFET performance is improved. Results obtained demonstrate the importance of considering the effective channel length in SiNWFinFET devices. Carrier mobility improvement based on the current-voltage graph is also reported.",
keywords = "SiNWFinFET, Channel Length Modulation, MODEL",
author = "Hamid, {Fatimah K. A.} and Sohail Anwar and Amin, {N. Aziziah} and Zaharah Johari and Hatef Sadeghi and Nurudin, {M. A.} and Ahmadi, {M. T.} and Razali Ismail",
year = "2013",
month = apr,
doi = "10.1166/jctn.2013.2793",
language = "English",
volume = "10",
pages = "964--967",
journal = "Journal of Computational and Theoretical Nanoscience",
issn = "1546-1955",
publisher = "American Scientific Publishers",
number = "4",

}

RIS

TY - JOUR

T1 - The effect of effective channel length on a Silicon Nanowire Fin Field Effect Transistor

AU - Hamid, Fatimah K. A.

AU - Anwar, Sohail

AU - Amin, N. Aziziah

AU - Johari, Zaharah

AU - Sadeghi, Hatef

AU - Nurudin, M. A.

AU - Ahmadi, M. T.

AU - Ismail, Razali

PY - 2013/4

Y1 - 2013/4

N2 - Silicon Nanowire Fin Field Effect Transistor (SiNWFinFET) is a unique transistor in which all of its gates wrap the insulator and inner layer of silicon. In this paper, the effective channel length effect on Silicon Nanowire FinFET is presented, based on the quantum confinement effects. The analytical model of current voltage incorporated with the effects of channel length modulation, is developed, and verified with published experimental data. The results show that by considering the channel length modulation effect, the SiNWFinFET performance is improved. Results obtained demonstrate the importance of considering the effective channel length in SiNWFinFET devices. Carrier mobility improvement based on the current-voltage graph is also reported.

AB - Silicon Nanowire Fin Field Effect Transistor (SiNWFinFET) is a unique transistor in which all of its gates wrap the insulator and inner layer of silicon. In this paper, the effective channel length effect on Silicon Nanowire FinFET is presented, based on the quantum confinement effects. The analytical model of current voltage incorporated with the effects of channel length modulation, is developed, and verified with published experimental data. The results show that by considering the channel length modulation effect, the SiNWFinFET performance is improved. Results obtained demonstrate the importance of considering the effective channel length in SiNWFinFET devices. Carrier mobility improvement based on the current-voltage graph is also reported.

KW - SiNWFinFET

KW - Channel Length Modulation

KW - MODEL

U2 - 10.1166/jctn.2013.2793

DO - 10.1166/jctn.2013.2793

M3 - Journal article

VL - 10

SP - 964

EP - 967

JO - Journal of Computational and Theoretical Nanoscience

JF - Journal of Computational and Theoretical Nanoscience

SN - 1546-1955

IS - 4

ER -