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The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory

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The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory. / Hayne, M.; Young, R. J.; Smakman, E. P.; Nowozin, T.; Hodgson, Peter; Garleff, J. K.; Rambabu, P.; Koenraad, P. M.; Marent, A.; Bonato, L.; Schliwa, A.; Bimberg, D.

In: Journal of Physics D: Applied Physics, Vol. 46, No. 26, 264001, 03.07.2013.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Hayne, M, Young, RJ, Smakman, EP, Nowozin, T, Hodgson, P, Garleff, JK, Rambabu, P, Koenraad, PM, Marent, A, Bonato, L, Schliwa, A & Bimberg, D 2013, 'The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory', Journal of Physics D: Applied Physics, vol. 46, no. 26, 264001. https://doi.org/10.1088/0022-3727/46/26/264001

APA

Hayne, M., Young, R. J., Smakman, E. P., Nowozin, T., Hodgson, P., Garleff, J. K., Rambabu, P., Koenraad, P. M., Marent, A., Bonato, L., Schliwa, A., & Bimberg, D. (2013). The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory. Journal of Physics D: Applied Physics, 46(26), [264001]. https://doi.org/10.1088/0022-3727/46/26/264001

Vancouver

Author

Hayne, M. ; Young, R. J. ; Smakman, E. P. ; Nowozin, T. ; Hodgson, Peter ; Garleff, J. K. ; Rambabu, P. ; Koenraad, P. M. ; Marent, A. ; Bonato, L. ; Schliwa, A. ; Bimberg, D. / The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory. In: Journal of Physics D: Applied Physics. 2013 ; Vol. 46, No. 26.

Bibtex

@article{d60d9f4002474a2791d0fa42e50a3b7d,
title = "The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory",
abstract = "The potential for GaSb nanostructures embedded in GaAs to operate as charge-based memory elements at room temperature is introduced and explored. Cross-sectional scanning-tunnelling microscopy is employed to directly probe and optimize the growth of nanostructures by molecular beam epitaxy. The results of structural analysis are combined with electrical measurements made with deep-level transient spectroscopy, showing excellent agreement with theoretical calculations which model the electronic structure of the nanostructures using 8-band k.p theory. Hole-localization energies exceeding 600 meV in quantum dots and near-100% material contrast between GaSb-rich quantum rings (QRs) and the surrounding GaAs matrix are revealed (no intermixing). Optical measurements confirm the depth of the hole localization, and demonstrate substantially lower inhomogeneous broadening than has previously been reported. Multiple peaks are partially resolved in ensemble photoluminescence of GaSb/GaAs QRs, and are attributed to charge states from discrete numbers of confined holes.",
keywords = "SEMICONDUCTORS, LOCALIZATION, QUANTUM DOTS, LEVEL-TRANSIENT SPECTROSCOPY",
author = "M. Hayne and Young, {R. J.} and Smakman, {E. P.} and T. Nowozin and Peter Hodgson and Garleff, {J. K.} and P. Rambabu and Koenraad, {P. M.} and A. Marent and L. Bonato and A. Schliwa and D. Bimberg",
year = "2013",
month = jul,
day = "3",
doi = "10.1088/0022-3727/46/26/264001",
language = "English",
volume = "46",
journal = "Journal of Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd",
number = "26",

}

RIS

TY - JOUR

T1 - The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory

AU - Hayne, M.

AU - Young, R. J.

AU - Smakman, E. P.

AU - Nowozin, T.

AU - Hodgson, Peter

AU - Garleff, J. K.

AU - Rambabu, P.

AU - Koenraad, P. M.

AU - Marent, A.

AU - Bonato, L.

AU - Schliwa, A.

AU - Bimberg, D.

PY - 2013/7/3

Y1 - 2013/7/3

N2 - The potential for GaSb nanostructures embedded in GaAs to operate as charge-based memory elements at room temperature is introduced and explored. Cross-sectional scanning-tunnelling microscopy is employed to directly probe and optimize the growth of nanostructures by molecular beam epitaxy. The results of structural analysis are combined with electrical measurements made with deep-level transient spectroscopy, showing excellent agreement with theoretical calculations which model the electronic structure of the nanostructures using 8-band k.p theory. Hole-localization energies exceeding 600 meV in quantum dots and near-100% material contrast between GaSb-rich quantum rings (QRs) and the surrounding GaAs matrix are revealed (no intermixing). Optical measurements confirm the depth of the hole localization, and demonstrate substantially lower inhomogeneous broadening than has previously been reported. Multiple peaks are partially resolved in ensemble photoluminescence of GaSb/GaAs QRs, and are attributed to charge states from discrete numbers of confined holes.

AB - The potential for GaSb nanostructures embedded in GaAs to operate as charge-based memory elements at room temperature is introduced and explored. Cross-sectional scanning-tunnelling microscopy is employed to directly probe and optimize the growth of nanostructures by molecular beam epitaxy. The results of structural analysis are combined with electrical measurements made with deep-level transient spectroscopy, showing excellent agreement with theoretical calculations which model the electronic structure of the nanostructures using 8-band k.p theory. Hole-localization energies exceeding 600 meV in quantum dots and near-100% material contrast between GaSb-rich quantum rings (QRs) and the surrounding GaAs matrix are revealed (no intermixing). Optical measurements confirm the depth of the hole localization, and demonstrate substantially lower inhomogeneous broadening than has previously been reported. Multiple peaks are partially resolved in ensemble photoluminescence of GaSb/GaAs QRs, and are attributed to charge states from discrete numbers of confined holes.

KW - SEMICONDUCTORS

KW - LOCALIZATION

KW - QUANTUM DOTS

KW - LEVEL-TRANSIENT SPECTROSCOPY

U2 - 10.1088/0022-3727/46/26/264001

DO - 10.1088/0022-3727/46/26/264001

M3 - Journal article

VL - 46

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 0022-3727

IS - 26

M1 - 264001

ER -