Home > Research > Publications & Outputs > Topological edge states in high-temperature sup...

Research

Links

Text available via DOI:

View graph of relations

Topological edge states in high-temperature superconductiving FeSe/SrTiO 3 films with Te substitution

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Published

Standard

Topological edge states in high-temperature superconductiving FeSe/SrTiO 3 films with Te substitution. / Chen, L.; Liu, H.; Jiang, C. et al.
In: Scientific Reports, Vol. 9, No. 1, 4154, 11.03.2019.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Chen, L, Liu, H, Jiang, C, Shi, C, Wang, D, Cui, G, Li, X & Zhuang, Q 2019, 'Topological edge states in high-temperature superconductiving FeSe/SrTiO 3 films with Te substitution', Scientific Reports, vol. 9, no. 1, 4154. https://doi.org/10.1038/s41598-019-40644-0

APA

Chen, L., Liu, H., Jiang, C., Shi, C., Wang, D., Cui, G., Li, X., & Zhuang, Q. (2019). Topological edge states in high-temperature superconductiving FeSe/SrTiO 3 films with Te substitution. Scientific Reports, 9(1), Article 4154. https://doi.org/10.1038/s41598-019-40644-0

Vancouver

Chen L, Liu H, Jiang C, Shi C, Wang D, Cui G et al. Topological edge states in high-temperature superconductiving FeSe/SrTiO 3 films with Te substitution. Scientific Reports. 2019 Mar 11;9(1):4154. doi: 10.1038/s41598-019-40644-0

Author

Chen, L. ; Liu, H. ; Jiang, C. et al. / Topological edge states in high-temperature superconductiving FeSe/SrTiO 3 films with Te substitution. In: Scientific Reports. 2019 ; Vol. 9, No. 1.

Bibtex

@article{a9f371433b744c32935632f232bbab7e,
title = "Topological edge states in high-temperature superconductiving FeSe/SrTiO 3 films with Te substitution",
abstract = "Using first principles theory, we investigated the behavior of the one-dimensional (1D) topological edge states of high temperature superconductiviing FeSe/SrTiO3 films with Te atoms substitution to Se atoms in the bottom (top) layer in single-layer FeSe, as a function of strain. It was discovered that the 1D topological edge states are present in single-unit-cell FeSe film on SrTiO3, but are absent when more than 50% Se atoms are replaced by Te atoms. Stress induced displacive phase transformation exists in FeSe/SrTiO3 film when Te atoms substitute Se atoms in the bottom (top) layer in single-layer FeSe under 3% strain respectively. The 1D topological edge states are present under 3% (1.8%) strain in FeSe/SrTiO3 films with Te substitution Se in the bottom (top) layer in single-layer FeSe, even up to 5%, respectively. This indicates that the bonding angle of Se-Fe-Se (Te) and the distance of Te (or Se) atoms to the Fe plane are correlated with the topological edge states. Our findings provide an effective interface system that provides both superconducting and topological states, opening a new route for realizing 2D topological superconductors with proximity effect.",
author = "L. Chen and H. Liu and C. Jiang and C. Shi and D. Wang and G. Cui and X. Li and Qiandong Zhuang",
year = "2019",
month = mar,
day = "11",
doi = "10.1038/s41598-019-40644-0",
language = "English",
volume = "9",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",
number = "1",

}

RIS

TY - JOUR

T1 - Topological edge states in high-temperature superconductiving FeSe/SrTiO 3 films with Te substitution

AU - Chen, L.

AU - Liu, H.

AU - Jiang, C.

AU - Shi, C.

AU - Wang, D.

AU - Cui, G.

AU - Li, X.

AU - Zhuang, Qiandong

PY - 2019/3/11

Y1 - 2019/3/11

N2 - Using first principles theory, we investigated the behavior of the one-dimensional (1D) topological edge states of high temperature superconductiviing FeSe/SrTiO3 films with Te atoms substitution to Se atoms in the bottom (top) layer in single-layer FeSe, as a function of strain. It was discovered that the 1D topological edge states are present in single-unit-cell FeSe film on SrTiO3, but are absent when more than 50% Se atoms are replaced by Te atoms. Stress induced displacive phase transformation exists in FeSe/SrTiO3 film when Te atoms substitute Se atoms in the bottom (top) layer in single-layer FeSe under 3% strain respectively. The 1D topological edge states are present under 3% (1.8%) strain in FeSe/SrTiO3 films with Te substitution Se in the bottom (top) layer in single-layer FeSe, even up to 5%, respectively. This indicates that the bonding angle of Se-Fe-Se (Te) and the distance of Te (or Se) atoms to the Fe plane are correlated with the topological edge states. Our findings provide an effective interface system that provides both superconducting and topological states, opening a new route for realizing 2D topological superconductors with proximity effect.

AB - Using first principles theory, we investigated the behavior of the one-dimensional (1D) topological edge states of high temperature superconductiviing FeSe/SrTiO3 films with Te atoms substitution to Se atoms in the bottom (top) layer in single-layer FeSe, as a function of strain. It was discovered that the 1D topological edge states are present in single-unit-cell FeSe film on SrTiO3, but are absent when more than 50% Se atoms are replaced by Te atoms. Stress induced displacive phase transformation exists in FeSe/SrTiO3 film when Te atoms substitute Se atoms in the bottom (top) layer in single-layer FeSe under 3% strain respectively. The 1D topological edge states are present under 3% (1.8%) strain in FeSe/SrTiO3 films with Te substitution Se in the bottom (top) layer in single-layer FeSe, even up to 5%, respectively. This indicates that the bonding angle of Se-Fe-Se (Te) and the distance of Te (or Se) atoms to the Fe plane are correlated with the topological edge states. Our findings provide an effective interface system that provides both superconducting and topological states, opening a new route for realizing 2D topological superconductors with proximity effect.

U2 - 10.1038/s41598-019-40644-0

DO - 10.1038/s41598-019-40644-0

M3 - Journal article

VL - 9

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

IS - 1

M1 - 4154

ER -