Standard
Towards accurate charge transport with SINIS turnstile. / Maisi, V. F.; Saira, O. P.; Kemppinen, A. et al.
2012 Conference on Precision Electromagnetic Measurements, CPEM 2012. IEEE, 2012. p. 248-249 6250895 (CPEM Digest (Conference on Precision Electromagnetic Measurements)).
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Harvard
Maisi, VF, Saira, OP, Kemppinen, A
, Pashkin, YA, Averin, DV, Manninen, A & Pekola, JP 2012,
Towards accurate charge transport with SINIS turnstile. in
2012 Conference on Precision Electromagnetic Measurements, CPEM 2012., 6250895, CPEM Digest (Conference on Precision Electromagnetic Measurements), IEEE, pp. 248-249, 2012 Conference on Precision Electromagnetic Measurements, CPEM 2012, Washington, DC, United States,
1/07/12.
https://doi.org/10.1109/CPEM.2012.6250895APA
Maisi, V. F., Saira, O. P., Kemppinen, A.
, Pashkin, Y. A., Averin, D. V., Manninen, A., & Pekola, J. P. (2012).
Towards accurate charge transport with SINIS turnstile. In
2012 Conference on Precision Electromagnetic Measurements, CPEM 2012 (pp. 248-249). Article 6250895 (CPEM Digest (Conference on Precision Electromagnetic Measurements)). IEEE.
https://doi.org/10.1109/CPEM.2012.6250895Vancouver
Maisi VF, Saira OP, Kemppinen A
, Pashkin YA, Averin DV, Manninen A et al.
Towards accurate charge transport with SINIS turnstile. In 2012 Conference on Precision Electromagnetic Measurements, CPEM 2012. IEEE. 2012. p. 248-249. 6250895. (CPEM Digest (Conference on Precision Electromagnetic Measurements)). doi: 10.1109/CPEM.2012.6250895
Author
Maisi, V. F. ; Saira, O. P. ; Kemppinen, A. et al. /
Towards accurate charge transport with SINIS turnstile. 2012 Conference on Precision Electromagnetic Measurements, CPEM 2012. IEEE, 2012. pp. 248-249 (CPEM Digest (Conference on Precision Electromagnetic Measurements)).
Bibtex
@inproceedings{4af4e73833d8485688cf02cf790a1c13,
title = "Towards accurate charge transport with SINIS turnstile",
abstract = "We discuss the current quantization obtainable in SINIS turnstiles. Various error processes, for example environmentally assisted and higher order tunneling as well as quasiparticle exitations in superconducting leads, may limit the achievable quantization. We argue that by careful design of the device, relative uncertainty of less than 10 -7, required by metrological applications, is feasible. We also present a scheme for error detection of the turnstiles.",
keywords = "Measurement standards, metrology, nanoelectronics, quantum mechanics, single electron devices, single electron transistors",
author = "Maisi, {V. F.} and Saira, {O. P.} and A. Kemppinen and Pashkin, {Yu A.} and Averin, {D. V.} and A. Manninen and Pekola, {J. P.}",
year = "2012",
month = oct,
day = "3",
doi = "10.1109/CPEM.2012.6250895",
language = "English",
isbn = "9781467304399",
series = "CPEM Digest (Conference on Precision Electromagnetic Measurements)",
publisher = "IEEE",
pages = "248--249",
booktitle = "2012 Conference on Precision Electromagnetic Measurements, CPEM 2012",
note = "2012 Conference on Precision Electromagnetic Measurements, CPEM 2012 ; Conference date: 01-07-2012 Through 06-07-2012",
}
RIS
TY - GEN
T1 - Towards accurate charge transport with SINIS turnstile
AU - Maisi, V. F.
AU - Saira, O. P.
AU - Kemppinen, A.
AU - Pashkin, Yu A.
AU - Averin, D. V.
AU - Manninen, A.
AU - Pekola, J. P.
PY - 2012/10/3
Y1 - 2012/10/3
N2 - We discuss the current quantization obtainable in SINIS turnstiles. Various error processes, for example environmentally assisted and higher order tunneling as well as quasiparticle exitations in superconducting leads, may limit the achievable quantization. We argue that by careful design of the device, relative uncertainty of less than 10 -7, required by metrological applications, is feasible. We also present a scheme for error detection of the turnstiles.
AB - We discuss the current quantization obtainable in SINIS turnstiles. Various error processes, for example environmentally assisted and higher order tunneling as well as quasiparticle exitations in superconducting leads, may limit the achievable quantization. We argue that by careful design of the device, relative uncertainty of less than 10 -7, required by metrological applications, is feasible. We also present a scheme for error detection of the turnstiles.
KW - Measurement standards
KW - metrology
KW - nanoelectronics
KW - quantum mechanics
KW - single electron devices
KW - single electron transistors
U2 - 10.1109/CPEM.2012.6250895
DO - 10.1109/CPEM.2012.6250895
M3 - Conference contribution/Paper
AN - SCOPUS:84866782418
SN - 9781467304399
T3 - CPEM Digest (Conference on Precision Electromagnetic Measurements)
SP - 248
EP - 249
BT - 2012 Conference on Precision Electromagnetic Measurements, CPEM 2012
PB - IEEE
T2 - 2012 Conference on Precision Electromagnetic Measurements, CPEM 2012
Y2 - 1 July 2012 through 6 July 2012
ER -
