Trilayer graphene nanoribbon carrier statistics in degenerate and non degenerate limits

Physics

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Trilayer graphene nanoribbon carrier statistics in degenerate and non degenerate limits. / Rahmani, M.; Ahmadi, M. T.; Webb, J. F. et al.
In: AIP Conference Proceedings, Vol. 1499, 20.11.2012, p. 272-275.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Rahmani, M, Ahmadi, MT, Webb, JF, Shayesteh, N, Mousavi, SM, Sadeghi, H & Ismail, R 2012, 'Trilayer graphene nanoribbon carrier statistics in degenerate and non degenerate limits', AIP Conference Proceedings, vol. 1499, pp. 272-275. https://doi.org/10.1063/1.4769000

APA

Rahmani, M., Ahmadi, M. T., Webb, J. F., Shayesteh, N., Mousavi, S. M., Sadeghi, H., & Ismail, R. (2012). Trilayer graphene nanoribbon carrier statistics in degenerate and non degenerate limits. AIP Conference Proceedings, 1499, 272-275. https://doi.org/10.1063/1.4769000

Vancouver

Rahmani M, Ahmadi MT, Webb JF, Shayesteh N, Mousavi SM, Sadeghi H et al. Trilayer graphene nanoribbon carrier statistics in degenerate and non degenerate limits. AIP Conference Proceedings. 2012 Nov 20;1499:272-275. doi: 10.1063/1.4769000

Author

Rahmani, M. ; Ahmadi, M. T. ; Webb, J. F. et al. / Trilayer graphene nanoribbon carrier statistics in degenerate and non degenerate limits. In: AIP Conference Proceedings. 2012 ; Vol. 1499. pp. 272-275.

Bibtex

@article{faf731a582af43bcb3fcb1f730cb1a1a,

title = "Trilayer graphene nanoribbon carrier statistics in degenerate and non degenerate limits",

abstract = "We present trilayer graphene nanoribbon carrier statistics in the degenerate and the nondegenerate limits. Within zero to 3k(B)T from the conduction or valence band edgers high concentrations of carriers sensitively depend on a normalized Fermi energy which is independent of temperature. The effect of different stacking orders of graphene multilayers on the electric field induced band gap is studied. The gap for trilayer graphene with the ABC stacking is much larger than the corresponding gap for the ABA trilayer. The gap for the different types of stacking is much larger as compared to the case of Bernal stacking. A non- monotonic dependence of the true energy gap in trilayer graphene on the charge density is investigated along with the electronic low-energy band structure of ABC stacked multilayer graphene. The band structure of trilayer graphene systems in the presence of a perpendicular electric field is obtained using a tight-binding approach.",

keywords = "Graphene nanoribbon, trilayer, carrier statistics, degenerate limit, non-degenerate limit",

author = "M. Rahmani and Ahmadi, {M. T.} and Webb, {J. F.} and N. Shayesteh and Mousavi, {S. M.} and Hatef Sadeghi and Razi Ismail",

year = "2012",

month = nov,

day = "20",

doi = "10.1063/1.4769000",

language = "English",

volume = "1499",

pages = "272--275",

journal = "AIP Conference Proceedings",

issn = "0094-243X",

publisher = "American Institute of Physics Publising LLC",

note = "6th Global Conference on Power Control and Optimization ; Conference date: 06-08-2012 Through 08-08-2012",

}

RIS

TY - JOUR

T1 - Trilayer graphene nanoribbon carrier statistics in degenerate and non degenerate limits

AU - Rahmani, M.

AU - Ahmadi, M. T.

AU - Webb, J. F.

AU - Shayesteh, N.

AU - Mousavi, S. M.

AU - Sadeghi, Hatef

AU - Ismail, Razi

PY - 2012/11/20

Y1 - 2012/11/20

N2 - We present trilayer graphene nanoribbon carrier statistics in the degenerate and the nondegenerate limits. Within zero to 3k(B)T from the conduction or valence band edgers high concentrations of carriers sensitively depend on a normalized Fermi energy which is independent of temperature. The effect of different stacking orders of graphene multilayers on the electric field induced band gap is studied. The gap for trilayer graphene with the ABC stacking is much larger than the corresponding gap for the ABA trilayer. The gap for the different types of stacking is much larger as compared to the case of Bernal stacking. A non- monotonic dependence of the true energy gap in trilayer graphene on the charge density is investigated along with the electronic low-energy band structure of ABC stacked multilayer graphene. The band structure of trilayer graphene systems in the presence of a perpendicular electric field is obtained using a tight-binding approach.

AB - We present trilayer graphene nanoribbon carrier statistics in the degenerate and the nondegenerate limits. Within zero to 3k(B)T from the conduction or valence band edgers high concentrations of carriers sensitively depend on a normalized Fermi energy which is independent of temperature. The effect of different stacking orders of graphene multilayers on the electric field induced band gap is studied. The gap for trilayer graphene with the ABC stacking is much larger than the corresponding gap for the ABA trilayer. The gap for the different types of stacking is much larger as compared to the case of Bernal stacking. A non- monotonic dependence of the true energy gap in trilayer graphene on the charge density is investigated along with the electronic low-energy band structure of ABC stacked multilayer graphene. The band structure of trilayer graphene systems in the presence of a perpendicular electric field is obtained using a tight-binding approach.

KW - Graphene nanoribbon

KW - trilayer

KW - carrier statistics

KW - degenerate limit

KW - non-degenerate limit

U2 - 10.1063/1.4769000

DO - 10.1063/1.4769000

M3 - Journal article

VL - 1499

SP - 272

EP - 275

JO - AIP Conference Proceedings

JF - AIP Conference Proceedings

SN - 0094-243X

T2 - 6th Global Conference on Power Control and Optimization

Y2 - 6 August 2012 through 8 August 2012

ER -

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