Rights statement: This is the author’s version of a work that was accepted for publication in Nano Energy. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Nano Energy, 108, 2023 DOI: 10.1016/j.nanoen.2023.108199
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Final published version
Licence: CC BY: Creative Commons Attribution 4.0 International License
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Tunable electrical field-induced metal-insulator phase separation in LiCoO2 synaptic transistor operating in post-percolation region
AU - Zhang, W.
AU - Chen, Y.
AU - Xu, C.
AU - Lin, C.
AU - Tao, J.
AU - Lin, Y.
AU - Li, J.
AU - Kolosov, O.V.
AU - Huang, Z.
N1 - This is the author’s version of a work that was accepted for publication in Nano Energy. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Nano Energy, 108, 2023 DOI: 10.1016/j.nanoen.2023.108199
PY - 2023/4/30
Y1 - 2023/4/30
N2 - While mixed ionic-electronic conductors with metal-insulator transition (MIT) are promising candidates for designing neuromorphic computing hardware, the fundamentals of resistive switching in these materials are yet to be well understood. This work studies the switching mechanism of the three-terminal nonvolatile redox transistor (NVRT) containing the LiCoO2 (LCO) channel layer with tunable preferred crystallographic orientation. We used atomic force microscope nanotomography to reconstruct the 3D conductance map of NVRTs, that reveals the applied gate electric-field induces the MIT via reversible phase separation in the LCO channel layer, with the nonequilibrium thermodynamics analytical model providing validation to this mechanism. By operating in the post-percolation region, the memory properties can continuously adjust the conductance states of NVRTs. The percolation conductance mechanism via the metallic LCO phase ensures the exceptional linearity and reproducibility of conductance modulation, whereas the field-, rather than current-, induced transition results in the low energy consumption replicating key features of the living neural cells.
AB - While mixed ionic-electronic conductors with metal-insulator transition (MIT) are promising candidates for designing neuromorphic computing hardware, the fundamentals of resistive switching in these materials are yet to be well understood. This work studies the switching mechanism of the three-terminal nonvolatile redox transistor (NVRT) containing the LiCoO2 (LCO) channel layer with tunable preferred crystallographic orientation. We used atomic force microscope nanotomography to reconstruct the 3D conductance map of NVRTs, that reveals the applied gate electric-field induces the MIT via reversible phase separation in the LCO channel layer, with the nonequilibrium thermodynamics analytical model providing validation to this mechanism. By operating in the post-percolation region, the memory properties can continuously adjust the conductance states of NVRTs. The percolation conductance mechanism via the metallic LCO phase ensures the exceptional linearity and reproducibility of conductance modulation, whereas the field-, rather than current-, induced transition results in the low energy consumption replicating key features of the living neural cells.
KW - Insulator-to-metal transition
KW - LiCoO2
KW - Phase separation
KW - Synaptic transistor
U2 - 10.1016/j.nanoen.2023.108199
DO - 10.1016/j.nanoen.2023.108199
M3 - Journal article
VL - 108
JO - Nano Energy
JF - Nano Energy
SN - 2211-2855
M1 - 108199
ER -