Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Tunable graphene system with two decoupled monolayers
AU - Schmidt, H.
AU - Luedtke, T.
AU - Barthold, P.
AU - McCann, E.
AU - Falko, Vladimir
AU - Haug, R. J.
PY - 2008/10/27
Y1 - 2008/10/27
N2 - The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FET) gives access to new types of nanoelectronic devices. Here, we report on the development of graphene-based FETs containing two decoupled graphene monolayers manufactured from a single one folded during the exfoliation process. The transport characteristics of these newly-developed devices differ markedly from those manufactured from a single-crystal bilayer. By analyzing Shubnikov-de Haas oscillations, we demonstrate the possibility to independently control the carrier densities in both layers using top and bottom gates, despite there being only a nanometer scale separation between them.
AB - The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FET) gives access to new types of nanoelectronic devices. Here, we report on the development of graphene-based FETs containing two decoupled graphene monolayers manufactured from a single one folded during the exfoliation process. The transport characteristics of these newly-developed devices differ markedly from those manufactured from a single-crystal bilayer. By analyzing Shubnikov-de Haas oscillations, we demonstrate the possibility to independently control the carrier densities in both layers using top and bottom gates, despite there being only a nanometer scale separation between them.
KW - carbon
KW - carrier density
KW - elemental semiconductors
KW - field effect transistors
KW - monolayers
KW - nanoelectronics
KW - nanostructured materials
KW - Shubnikov-de Haas effect
UR - http://www.scopus.com/inward/record.url?scp=55149104637&partnerID=8YFLogxK
U2 - 10.1063/1.3012369
DO - 10.1063/1.3012369
M3 - Journal article
VL - 93
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 1077-3118
IS - 17
M1 - 172108
ER -