Rights statement: This is an author-created, un-copyedited version of an article accepted for publication/published in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi:10.1088/0957-4484/26/47/475401
Accepted author manuscript, 946 KB, PDF document
Available under license: CC BY: Creative Commons Attribution 4.0 International License
Final published version
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Tuning thermoelectric properties of graphene/boron nitride heterostructures. / Algharagholy, Laith A.; Al-Galiby, Qusiy; Marhoon, Haider A. et al.
In: Nanotechnology, Vol. 26, No. 47, 475401, 03.11.2015.Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Tuning thermoelectric properties of graphene/boron nitride heterostructures
AU - Algharagholy, Laith A.
AU - Al-Galiby, Qusiy
AU - Marhoon, Haider A.
AU - Sadeghi, Hatef
AU - Abduljalil, Hayder M.
AU - Lambert, Colin J.
N1 - This is an author-created, un-copyedited version of an article accepted for publication/published in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi:10.1088/0957-4484/26/47/475401
PY - 2015/11/3
Y1 - 2015/11/3
N2 - Using density functional theory combined with a Green's function scattering approach, we examine the thermoelectric properties of hetero-nanoribbons formed from alternating lengths of graphene and boron nitride. In such structures, the boron nitride acts as a tunnel barrier, which weakly couples states in the graphene, to form mini-bands. In un-doped nanoribbons, the mini bands are symmetrically positioned relative to the Fermi energy and do not enhance thermoelectric performance significantly. In contrast, when the ribbons are doped by electron donating or electron accepting adsorbates, the thermopower S and electronic figure of merit are enhanced and either positive or negative thermopowers can be obtained. In the most favourable case, doping with the electron donor tetrathiafulvalene increases the room-temperature thermopower to -284 μv K(-1) and doping by the electron acceptor tetracyanoethylene increases S to 210 μv K(-1). After including both electron and phonon contributions to the thermal conductance, figures of merit ZT up to of order 0.9 are obtained.
AB - Using density functional theory combined with a Green's function scattering approach, we examine the thermoelectric properties of hetero-nanoribbons formed from alternating lengths of graphene and boron nitride. In such structures, the boron nitride acts as a tunnel barrier, which weakly couples states in the graphene, to form mini-bands. In un-doped nanoribbons, the mini bands are symmetrically positioned relative to the Fermi energy and do not enhance thermoelectric performance significantly. In contrast, when the ribbons are doped by electron donating or electron accepting adsorbates, the thermopower S and electronic figure of merit are enhanced and either positive or negative thermopowers can be obtained. In the most favourable case, doping with the electron donor tetrathiafulvalene increases the room-temperature thermopower to -284 μv K(-1) and doping by the electron acceptor tetracyanoethylene increases S to 210 μv K(-1). After including both electron and phonon contributions to the thermal conductance, figures of merit ZT up to of order 0.9 are obtained.
KW - nanoelectronics
KW - theropower
KW - boron nitride
U2 - 10.1088/0957-4484/26/47/475401
DO - 10.1088/0957-4484/26/47/475401
M3 - Journal article
C2 - 26528629
VL - 26
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 47
M1 - 475401
ER -