Home > Research > Publications & Outputs > Type II InSb/InAs quantum dot structures grown ...
View graph of relations

Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb-2 and As-2 fluxes

Research output: Contribution to Journal/MagazineJournal article

Published

Standard

Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb-2 and As-2 fluxes. / Carrington, Peter; Solov'ev, V. A.; Zhuang, Q. et al.

In: Proceedings of SPIE, Vol. 6900, 69000I, 01.02.2008.

Research output: Contribution to Journal/MagazineJournal article

Harvard

APA

Vancouver

Carrington P, Solov'ev VA, Zhuang Q, Ivanov SV, Krier A. Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb-2 and As-2 fluxes. Proceedings of SPIE. 2008 Feb 1;6900:69000I. doi: 10.1117/12.755465

Author

Bibtex

@article{9161550dd9e14bfa96b8c22e91d5fe0e,
title = "Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb-2 and As-2 fluxes",
abstract = "We report the molecular beam epitaxial growth of InSb quantum dots (QD) inserted as sub-monolayers in an InAs matrix and grown using Sb2 and As2 fluxes. These InSb QD nanostructures exhibit intense mid-infrared photoluminescence up to room temperature. The nominal thickness of the sub-monolayer insertions can be controlled by the growth temperature (TGr = 450-320 °C) which gives rise to the variation of the emission wavelength within the 3.6-4.0 μm range at room temperature. Light emitting diodes where fabricated using ten InSb QD sheets and were found to exhibit bright electroluminescence with a single peak at 3.8 μm at room temperature. A comparative analysis of the optical properties of the structures grown using (Sb2,As2) and (Sb4,As4) is also presented",
author = "Peter Carrington and Solov'ev, {V. A.} and Q. Zhuang and Ivanov, {S. V.} and A. Krier",
year = "2008",
month = feb,
day = "1",
doi = "10.1117/12.755465",
language = "English",
volume = "6900",
journal = "Proceedings of SPIE",
issn = "0277-786X",
publisher = "SPIE",

}

RIS

TY - JOUR

T1 - Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb-2 and As-2 fluxes

AU - Carrington, Peter

AU - Solov'ev, V. A.

AU - Zhuang, Q.

AU - Ivanov, S. V.

AU - Krier, A.

PY - 2008/2/1

Y1 - 2008/2/1

N2 - We report the molecular beam epitaxial growth of InSb quantum dots (QD) inserted as sub-monolayers in an InAs matrix and grown using Sb2 and As2 fluxes. These InSb QD nanostructures exhibit intense mid-infrared photoluminescence up to room temperature. The nominal thickness of the sub-monolayer insertions can be controlled by the growth temperature (TGr = 450-320 °C) which gives rise to the variation of the emission wavelength within the 3.6-4.0 μm range at room temperature. Light emitting diodes where fabricated using ten InSb QD sheets and were found to exhibit bright electroluminescence with a single peak at 3.8 μm at room temperature. A comparative analysis of the optical properties of the structures grown using (Sb2,As2) and (Sb4,As4) is also presented

AB - We report the molecular beam epitaxial growth of InSb quantum dots (QD) inserted as sub-monolayers in an InAs matrix and grown using Sb2 and As2 fluxes. These InSb QD nanostructures exhibit intense mid-infrared photoluminescence up to room temperature. The nominal thickness of the sub-monolayer insertions can be controlled by the growth temperature (TGr = 450-320 °C) which gives rise to the variation of the emission wavelength within the 3.6-4.0 μm range at room temperature. Light emitting diodes where fabricated using ten InSb QD sheets and were found to exhibit bright electroluminescence with a single peak at 3.8 μm at room temperature. A comparative analysis of the optical properties of the structures grown using (Sb2,As2) and (Sb4,As4) is also presented

U2 - 10.1117/12.755465

DO - 10.1117/12.755465

M3 - Journal article

VL - 6900

JO - Proceedings of SPIE

JF - Proceedings of SPIE

SN - 0277-786X

M1 - 69000I

ER -