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宽波段响应硅雪崩光电探测器研究

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宽波段响应硅雪崩光电探测器研究. / Peng, H.-L.; Wei, J.-Q.; Song, C.-X. et al.
In: Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves, Vol. 43, No. 4, 30.06.2024, p. 464-471.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Peng, H-L, Wei, J-Q, Song, C-X, Wang, T-C, Cao, P, Chen, J, Deng, J, Zhuang, Q-D & Zheng, W-H 2024, '宽波段响应硅雪崩光电探测器研究', Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves, vol. 43, no. 4, pp. 464-471. https://doi.org/10.11972/j.issn.1001-9014.2024.04.005

APA

Peng, H.-L., Wei, J.-Q., Song, C.-X., Wang, T.-C., Cao, P., Chen, J., Deng, J., Zhuang, Q.-D., & Zheng, W.-H. (2024). 宽波段响应硅雪崩光电探测器研究. Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves, 43(4), 464-471. https://doi.org/10.11972/j.issn.1001-9014.2024.04.005

Vancouver

Peng HL, Wei JQ, Song CX, Wang TC, Cao P, Chen J et al. 宽波段响应硅雪崩光电探测器研究. Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves. 2024 Jun 30;43(4):464-471. Epub 2024 Jun 13. doi: 10.11972/j.issn.1001-9014.2024.04.005

Author

Peng, H.-L. ; Wei, J.-Q. ; Song, C.-X. et al. / 宽波段响应硅雪崩光电探测器研究. In: Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves. 2024 ; Vol. 43, No. 4. pp. 464-471.

Bibtex

@article{b0248d513d594565933bffd96fd39fdd,
title = "宽波段响应硅雪崩光电探测器研究",
abstract = "Based on the current application requirements for wideband response photodetectors, we designed a novel silicon avalanche photodetector (Si APD) with high response in a broad spectral range of 250 -1 100 nm and it could achieve efficient detection of ultraviolet, visible and near-infrared light without splicing. The enhancement of silicon on ultraviolet and infrared bands was separately analyzed. This was followed by simulation on the device structure designs using different methods such as back incidence, to improve short wavelength absorption while maintaining a high infrared absorption. The Si APD shows a peak wavelength at around 940 nm and a high photoresponse at 250 nm and 1 100 nm which exceeds 15% of the peak responsivity. This type of device is suitable for multispectral applications and future high-precision detection.",
author = "H.-L. Peng and J.-Q. Wei and C.-X. Song and T.-C. Wang and P. Cao and J. Chen and J. Deng and Q.-D. Zhuang and W.-H. Zheng",
year = "2024",
month = jun,
day = "30",
doi = "10.11972/j.issn.1001-9014.2024.04.005",
language = "Chinese (Traditional)",
volume = "43",
pages = "464--471",
journal = "Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves",
number = "4",

}

RIS

TY - JOUR

T1 - 宽波段响应硅雪崩光电探测器研究

AU - Peng, H.-L.

AU - Wei, J.-Q.

AU - Song, C.-X.

AU - Wang, T.-C.

AU - Cao, P.

AU - Chen, J.

AU - Deng, J.

AU - Zhuang, Q.-D.

AU - Zheng, W.-H.

PY - 2024/6/30

Y1 - 2024/6/30

N2 - Based on the current application requirements for wideband response photodetectors, we designed a novel silicon avalanche photodetector (Si APD) with high response in a broad spectral range of 250 -1 100 nm and it could achieve efficient detection of ultraviolet, visible and near-infrared light without splicing. The enhancement of silicon on ultraviolet and infrared bands was separately analyzed. This was followed by simulation on the device structure designs using different methods such as back incidence, to improve short wavelength absorption while maintaining a high infrared absorption. The Si APD shows a peak wavelength at around 940 nm and a high photoresponse at 250 nm and 1 100 nm which exceeds 15% of the peak responsivity. This type of device is suitable for multispectral applications and future high-precision detection.

AB - Based on the current application requirements for wideband response photodetectors, we designed a novel silicon avalanche photodetector (Si APD) with high response in a broad spectral range of 250 -1 100 nm and it could achieve efficient detection of ultraviolet, visible and near-infrared light without splicing. The enhancement of silicon on ultraviolet and infrared bands was separately analyzed. This was followed by simulation on the device structure designs using different methods such as back incidence, to improve short wavelength absorption while maintaining a high infrared absorption. The Si APD shows a peak wavelength at around 940 nm and a high photoresponse at 250 nm and 1 100 nm which exceeds 15% of the peak responsivity. This type of device is suitable for multispectral applications and future high-precision detection.

U2 - 10.11972/j.issn.1001-9014.2024.04.005

DO - 10.11972/j.issn.1001-9014.2024.04.005

M3 - Journal article

VL - 43

SP - 464

EP - 471

JO - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

JF - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

IS - 4

ER -