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Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics

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Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics. / Georgiou, Thanasis; Jalil, Rashid; Belle, Branson D.; Britnell, Liam; Gorbachev, Roman V.; Morozov, Sergey V.; Kim, Yong-Jin; Gholinia, Ali; Haigh, Sarah J.; Makarovsky, Oleg; Eaves, Laurence; Ponomarenko, Leonid A.; Geim, Andre K.; Novoselov, Kostya S.; Mishchenko, Artem.

In: Nature Nanotechnology, Vol. 8, No. 2, 02.2013, p. 100-103.

Research output: Contribution to journalJournal articlepeer-review

Harvard

Georgiou, T, Jalil, R, Belle, BD, Britnell, L, Gorbachev, RV, Morozov, SV, Kim, Y-J, Gholinia, A, Haigh, SJ, Makarovsky, O, Eaves, L, Ponomarenko, LA, Geim, AK, Novoselov, KS & Mishchenko, A 2013, 'Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics', Nature Nanotechnology, vol. 8, no. 2, pp. 100-103. https://doi.org/10.1038/NNANO.2012.224

APA

Georgiou, T., Jalil, R., Belle, B. D., Britnell, L., Gorbachev, R. V., Morozov, S. V., Kim, Y-J., Gholinia, A., Haigh, S. J., Makarovsky, O., Eaves, L., Ponomarenko, L. A., Geim, A. K., Novoselov, K. S., & Mishchenko, A. (2013). Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics. Nature Nanotechnology, 8(2), 100-103. https://doi.org/10.1038/NNANO.2012.224

Vancouver

Georgiou T, Jalil R, Belle BD, Britnell L, Gorbachev RV, Morozov SV et al. Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics. Nature Nanotechnology. 2013 Feb;8(2):100-103. https://doi.org/10.1038/NNANO.2012.224

Author

Georgiou, Thanasis ; Jalil, Rashid ; Belle, Branson D. ; Britnell, Liam ; Gorbachev, Roman V. ; Morozov, Sergey V. ; Kim, Yong-Jin ; Gholinia, Ali ; Haigh, Sarah J. ; Makarovsky, Oleg ; Eaves, Laurence ; Ponomarenko, Leonid A. ; Geim, Andre K. ; Novoselov, Kostya S. ; Mishchenko, Artem. / Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics. In: Nature Nanotechnology. 2013 ; Vol. 8, No. 2. pp. 100-103.

Bibtex

@article{dc74675daefb4826a695f45ef9ee169f,
title = "Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics",
abstract = "The celebrated electronic properties of graphene(1,2) have opened the way for materials just one atom thick(3) to be used in the post-silicon electronic era(4). An important milestone was the creation of heterostructures based on graphene and other two-dimensional crystals, which can be assembled into three-dimensional stacks with atomic layer precision(5-7). Such layered structures have already demonstrated a range of fascinating physical phenomena(8-71), and have also been used in demonstrating a prototype field-effect tunnelling transistor(12), which is regarded to be a candidate for post-CMOS (complementary metal-oxide semiconductor) technology. The range of possible materials that could be incorporated into such stacks is very large. Indeed, there are many other materials with layers linked by weak van der Waals forces that can be exfoliated(3,13) and combined together to create novel highly tailored heterostructures. Here, we describe a new generation of field-effect vertical tunnelling transistors where two-dimensional tungsten disulphide serves as an atomically thin barrier between two layers of either mechanically exfoliated or chemical vapour deposition-grown graphene. The combination of tunnelling (under the barrier) and thermionic (over the barrier) transport allows for unprecedented current modulation exceeding 1 x 10(6) at room temperature and very high ON current. These devices can also operate on transparent and flexible substrates.",
keywords = "DOUBLE-LAYER GRAPHENE, FILMS",
author = "Thanasis Georgiou and Rashid Jalil and Belle, {Branson D.} and Liam Britnell and Gorbachev, {Roman V.} and Morozov, {Sergey V.} and Yong-Jin Kim and Ali Gholinia and Haigh, {Sarah J.} and Oleg Makarovsky and Laurence Eaves and Ponomarenko, {Leonid A.} and Geim, {Andre K.} and Novoselov, {Kostya S.} and Artem Mishchenko",
year = "2013",
month = feb,
doi = "10.1038/NNANO.2012.224",
language = "English",
volume = "8",
pages = "100--103",
journal = "Nature Nanotechnology",
issn = "1748-3387",
publisher = "Nature Publishing Group",
number = "2",

}

RIS

TY - JOUR

T1 - Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics

AU - Georgiou, Thanasis

AU - Jalil, Rashid

AU - Belle, Branson D.

AU - Britnell, Liam

AU - Gorbachev, Roman V.

AU - Morozov, Sergey V.

AU - Kim, Yong-Jin

AU - Gholinia, Ali

AU - Haigh, Sarah J.

AU - Makarovsky, Oleg

AU - Eaves, Laurence

AU - Ponomarenko, Leonid A.

AU - Geim, Andre K.

AU - Novoselov, Kostya S.

AU - Mishchenko, Artem

PY - 2013/2

Y1 - 2013/2

N2 - The celebrated electronic properties of graphene(1,2) have opened the way for materials just one atom thick(3) to be used in the post-silicon electronic era(4). An important milestone was the creation of heterostructures based on graphene and other two-dimensional crystals, which can be assembled into three-dimensional stacks with atomic layer precision(5-7). Such layered structures have already demonstrated a range of fascinating physical phenomena(8-71), and have also been used in demonstrating a prototype field-effect tunnelling transistor(12), which is regarded to be a candidate for post-CMOS (complementary metal-oxide semiconductor) technology. The range of possible materials that could be incorporated into such stacks is very large. Indeed, there are many other materials with layers linked by weak van der Waals forces that can be exfoliated(3,13) and combined together to create novel highly tailored heterostructures. Here, we describe a new generation of field-effect vertical tunnelling transistors where two-dimensional tungsten disulphide serves as an atomically thin barrier between two layers of either mechanically exfoliated or chemical vapour deposition-grown graphene. The combination of tunnelling (under the barrier) and thermionic (over the barrier) transport allows for unprecedented current modulation exceeding 1 x 10(6) at room temperature and very high ON current. These devices can also operate on transparent and flexible substrates.

AB - The celebrated electronic properties of graphene(1,2) have opened the way for materials just one atom thick(3) to be used in the post-silicon electronic era(4). An important milestone was the creation of heterostructures based on graphene and other two-dimensional crystals, which can be assembled into three-dimensional stacks with atomic layer precision(5-7). Such layered structures have already demonstrated a range of fascinating physical phenomena(8-71), and have also been used in demonstrating a prototype field-effect tunnelling transistor(12), which is regarded to be a candidate for post-CMOS (complementary metal-oxide semiconductor) technology. The range of possible materials that could be incorporated into such stacks is very large. Indeed, there are many other materials with layers linked by weak van der Waals forces that can be exfoliated(3,13) and combined together to create novel highly tailored heterostructures. Here, we describe a new generation of field-effect vertical tunnelling transistors where two-dimensional tungsten disulphide serves as an atomically thin barrier between two layers of either mechanically exfoliated or chemical vapour deposition-grown graphene. The combination of tunnelling (under the barrier) and thermionic (over the barrier) transport allows for unprecedented current modulation exceeding 1 x 10(6) at room temperature and very high ON current. These devices can also operate on transparent and flexible substrates.

KW - DOUBLE-LAYER GRAPHENE

KW - FILMS

U2 - 10.1038/NNANO.2012.224

DO - 10.1038/NNANO.2012.224

M3 - Journal article

VL - 8

SP - 100

EP - 103

JO - Nature Nanotechnology

JF - Nature Nanotechnology

SN - 1748-3387

IS - 2

ER -