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    Rights statement: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Photonics, copyright © 2015 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acsphotonics.5b00159

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Visible spectrum quantum light sources based on InGaN/GaN quantum dots

Research output: Contribution to Journal/MagazineJournal articlepeer-review

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Visible spectrum quantum light sources based on InGaN/GaN quantum dots. / Tomic, Stanko; Pal, Joydeep; Migliorato, Max A. et al.
In: ACS Photonics, Vol. 2, No. 7, 15.07.2015, p. 958-963.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Tomic, S, Pal, J, Migliorato, MA, Young, R & Vukmirovic, N 2015, 'Visible spectrum quantum light sources based on InGaN/GaN quantum dots', ACS Photonics, vol. 2, no. 7, pp. 958-963. https://doi.org/10.1021/acsphotonics.5b00159

APA

Tomic, S., Pal, J., Migliorato, M. A., Young, R., & Vukmirovic, N. (2015). Visible spectrum quantum light sources based on InGaN/GaN quantum dots. ACS Photonics, 2(7), 958-963. https://doi.org/10.1021/acsphotonics.5b00159

Vancouver

Tomic S, Pal J, Migliorato MA, Young R, Vukmirovic N. Visible spectrum quantum light sources based on InGaN/GaN quantum dots. ACS Photonics. 2015 Jul 15;2(7):958-963. Epub 2015 Jun 9. doi: 10.1021/acsphotonics.5b00159

Author

Tomic, Stanko ; Pal, Joydeep ; Migliorato, Max A. et al. / Visible spectrum quantum light sources based on InGaN/GaN quantum dots. In: ACS Photonics. 2015 ; Vol. 2, No. 7. pp. 958-963.

Bibtex

@article{f3b5675d42034a10b512d817dbbf035c,
title = "Visible spectrum quantum light sources based on InGaN/GaN quantum dots",
abstract = "We present a method for designing quantum light sources, emitting in the visible band, using wurtzite InxGa1−xN quantum dots (QDs) in a GaN matrix. This system is significantly more versatile than previously proposed arsenide and phosphide based QDs, having a tuning range exceeding 1 eV. The quantum mechanical configuration interaction method, capturing the fermionic nature of electrons and associated quantum effects explicitly, is used to find shapes and compositions of dots to maximize the excitonic dipole matrix element, and optimise the biexciton binding energy. These results provide QD morphologies tailored for either bright single photon emission or entangled photon pair emission, at any given wavelength in the visible spectrum.",
author = "Stanko Tomic and Joydeep Pal and Migliorato, {Max A.} and Robert Young and Nenad Vukmirovic",
note = "This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Photonics, copyright {\textcopyright} 2015 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acsphotonics.5b00159",
year = "2015",
month = jul,
day = "15",
doi = "10.1021/acsphotonics.5b00159",
language = "English",
volume = "2",
pages = "958--963",
journal = "ACS Photonics",
issn = "2330-4022",
publisher = "American Chemical Society",
number = "7",

}

RIS

TY - JOUR

T1 - Visible spectrum quantum light sources based on InGaN/GaN quantum dots

AU - Tomic, Stanko

AU - Pal, Joydeep

AU - Migliorato, Max A.

AU - Young, Robert

AU - Vukmirovic, Nenad

N1 - This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Photonics, copyright © 2015 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acsphotonics.5b00159

PY - 2015/7/15

Y1 - 2015/7/15

N2 - We present a method for designing quantum light sources, emitting in the visible band, using wurtzite InxGa1−xN quantum dots (QDs) in a GaN matrix. This system is significantly more versatile than previously proposed arsenide and phosphide based QDs, having a tuning range exceeding 1 eV. The quantum mechanical configuration interaction method, capturing the fermionic nature of electrons and associated quantum effects explicitly, is used to find shapes and compositions of dots to maximize the excitonic dipole matrix element, and optimise the biexciton binding energy. These results provide QD morphologies tailored for either bright single photon emission or entangled photon pair emission, at any given wavelength in the visible spectrum.

AB - We present a method for designing quantum light sources, emitting in the visible band, using wurtzite InxGa1−xN quantum dots (QDs) in a GaN matrix. This system is significantly more versatile than previously proposed arsenide and phosphide based QDs, having a tuning range exceeding 1 eV. The quantum mechanical configuration interaction method, capturing the fermionic nature of electrons and associated quantum effects explicitly, is used to find shapes and compositions of dots to maximize the excitonic dipole matrix element, and optimise the biexciton binding energy. These results provide QD morphologies tailored for either bright single photon emission or entangled photon pair emission, at any given wavelength in the visible spectrum.

U2 - 10.1021/acsphotonics.5b00159

DO - 10.1021/acsphotonics.5b00159

M3 - Journal article

VL - 2

SP - 958

EP - 963

JO - ACS Photonics

JF - ACS Photonics

SN - 2330-4022

IS - 7

ER -