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Voltage tunability of single-spin states in a quantum dot

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Voltage tunability of single-spin states in a quantum dot. / Bennett, Anthony J.; A. Pooley, Matthew; Cao, Yameng et al.
In: Nature Communications, Vol. 4, 1522, 26.02.2013.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Bennett, AJ, A. Pooley, M, Cao, Y, Skold, N, Farrer, I, Ritchie, DA & Shields, AJ 2013, 'Voltage tunability of single-spin states in a quantum dot', Nature Communications, vol. 4, 1522. https://doi.org/10.1038/ncomms2519

APA

Bennett, A. J., A. Pooley, M., Cao, Y., Skold, N., Farrer, I., Ritchie, D. A., & Shields, A. J. (2013). Voltage tunability of single-spin states in a quantum dot. Nature Communications, 4, Article 1522. https://doi.org/10.1038/ncomms2519

Vancouver

Bennett AJ, A. Pooley M, Cao Y, Skold N, Farrer I, Ritchie DA et al. Voltage tunability of single-spin states in a quantum dot. Nature Communications. 2013 Feb 26;4:1522. doi: 10.1038/ncomms2519

Author

Bennett, Anthony J. ; A. Pooley, Matthew ; Cao, Yameng et al. / Voltage tunability of single-spin states in a quantum dot. In: Nature Communications. 2013 ; Vol. 4.

Bibtex

@article{e4a02684e1a147c8bb289b2de70c7d78,
title = "Voltage tunability of single-spin states in a quantum dot",
abstract = "Single spins in the solid state offer a unique opportunity to store and manipulate quantum information, and to perform quantum-enhanced sensing of local fields and charges. Optical control of these systems using techniques developed in atomic physics has yet to exploit all the advantages of the solid state. Here we demonstrate voltage tunability of the spin energy- levels in a single quantum dot by modifying how spins sense magnetic field.We find that the in-plane g-factor varies discontinuously for electrons, as more holes are loaded onto the dot. In contrast, the in-plane hole g-factor varies continuously. The device can change the sign of the in-plane g-factor of a single hole, at which point an avoided crossing is observed in the two spin eigenstates. This is exactly what is required for universal control of a single spin with a single electrical gate.",
author = "Bennett, {Anthony J.} and {A. Pooley}, Matthew and Yameng Cao and Niklas Skold and Ian Farrer and Ritchie, {David A.} and Shields, {Andrew J.}",
year = "2013",
month = feb,
day = "26",
doi = "10.1038/ncomms2519",
language = "English",
volume = "4",
journal = "Nature Communications",
issn = "2041-1723",
publisher = "Nature Publishing Group",

}

RIS

TY - JOUR

T1 - Voltage tunability of single-spin states in a quantum dot

AU - Bennett, Anthony J.

AU - A. Pooley, Matthew

AU - Cao, Yameng

AU - Skold, Niklas

AU - Farrer, Ian

AU - Ritchie, David A.

AU - Shields, Andrew J.

PY - 2013/2/26

Y1 - 2013/2/26

N2 - Single spins in the solid state offer a unique opportunity to store and manipulate quantum information, and to perform quantum-enhanced sensing of local fields and charges. Optical control of these systems using techniques developed in atomic physics has yet to exploit all the advantages of the solid state. Here we demonstrate voltage tunability of the spin energy- levels in a single quantum dot by modifying how spins sense magnetic field.We find that the in-plane g-factor varies discontinuously for electrons, as more holes are loaded onto the dot. In contrast, the in-plane hole g-factor varies continuously. The device can change the sign of the in-plane g-factor of a single hole, at which point an avoided crossing is observed in the two spin eigenstates. This is exactly what is required for universal control of a single spin with a single electrical gate.

AB - Single spins in the solid state offer a unique opportunity to store and manipulate quantum information, and to perform quantum-enhanced sensing of local fields and charges. Optical control of these systems using techniques developed in atomic physics has yet to exploit all the advantages of the solid state. Here we demonstrate voltage tunability of the spin energy- levels in a single quantum dot by modifying how spins sense magnetic field.We find that the in-plane g-factor varies discontinuously for electrons, as more holes are loaded onto the dot. In contrast, the in-plane hole g-factor varies continuously. The device can change the sign of the in-plane g-factor of a single hole, at which point an avoided crossing is observed in the two spin eigenstates. This is exactly what is required for universal control of a single spin with a single electrical gate.

U2 - 10.1038/ncomms2519

DO - 10.1038/ncomms2519

M3 - Journal article

VL - 4

JO - Nature Communications

JF - Nature Communications

SN - 2041-1723

M1 - 1522

ER -