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Weak localization in monolayer and bilayer graphene.

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<mark>Journal publication date</mark>09/2007
<mark>Journal</mark>European Physical Journal - Special Topics
Issue number1
Volume148
Number of pages16
Pages (from-to)39-54
Publication StatusPublished
<mark>Original language</mark>English

Abstract

We describe the weak localization correction to conductivity in ultra-thin graphene films, taking into account disorder scattering and the influence of trigonal warping of the Fermi surface. A possible manifestation of the chiral nature of electrons in the localization properties is hampered by trigonal warping, resulting in a suppression of the weak anti-localization effect in monolayer graphene and of weak localization in bilayer graphene. Intervalley scattering due to atomically sharp scatterers in a realistic graphene sheet or by edges in a narrow wire tends to restore weak localization resulting in negative magnetoresistance in both materials.

Bibliographic note

The original publication is available at www.springerlink.com