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Results for molecular beam epitaxy

Publications & Outputs

  1. InAs/GaSb superlattice interband cascade light emitting diodes with high output power and high wall-plug efficiency

    Lu, Q., Krier, A., Zhou, Y., Cai, X., Xu, Z., Chen, J. & He, L., 27/06/2019, In : Applied Physics Letters. 114, 25, 5 p., 253507.

    Research output: Contribution to journalJournal article

  2. Metamorphic Integration of GaInAsSb Material on GaAs Substrates for Light Emitting Device Applications

    Lu, Q., Marshall, A. & Krier, A., 29/05/2019, In : Materials. 12, 11, 8 p., 1743.

    Research output: Contribution to journalJournal article

  3. Mid-Infrared InAs/InAsSb Superlattice nBn Photodetector Monolithically Integrated onto Silicon

    Delli, E., Letka, V., Hodgson, P. D., Repiso Menendez, E., Hayton, J., Craig, A. P., Lu, Q., Beanland, R., Krier, A., Marshall, A. R. J. & Carrington, P. J., 28/02/2019, In : ACS Photonics. 6, 2, p. 538–544 7 p.

    Research output: Contribution to journalJournal article

  4. Realization of vertically aligned, ultra-high aspect ratio InAsSb nanowires on graphite

    Anyebe, E., Sanchez, A., Hindmarsh, S., Chen, X., Shao, J., Rajpalke, M. K., Veal, T. D., Robinson, B., Kolosov, O., Anderson, F., Sandaram, R., Wang, Z. M., Falko, V. & Zhuang, Q., 18/06/2015, In : Nano Letters. 15, 7, p. 4348-4355 8 p.

    Research output: Contribution to journalLetter

  5. Sb-induced phase control of InAsSb nanowires grown by molecular beam epitaxy

    Zhuang, Q., Anyebe, E., Chen, R., Liu, H., Sanchez, A., Rajpalke, M. K., Veal, T. D., Wang, Z. M., huang, Y. & Sun, H. D., 5/01/2015, In : Nano Letters. 15, 2, p. 1109-1116 8 p.

    Research output: Contribution to journalLetter

  6. The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy

    Anyebe, E., Zhuang, Q., Kesaria, M. & Krier, A., 08/2014, In : Semiconductor Science and Technology. 29, 8, 7 p., 085010.

    Research output: Contribution to journalJournal article

  7. Magneto-photoluminescence studies of the influence of substrate orientation on the growth of InAs/GaAs quantum dots

    Maes, J., Henini, M., Hayne, M., Patane, A., Pulizzi, F., Eaves, L., Main, P. C. & Moshchalkov, V. V., 04/2003, In : Journal of Crystal Growth. 251, 1-4, p. 186-191 6 p.

    Research output: Contribution to journalJournal article